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PDF PAD1 Datasheet ( Hoja de datos )

Número de pieza PAD1
Descripción PICO AMPERE DIODES
Fabricantes Linear Integrated Systems 
Logotipo Linear Integrated Systems Logotipo

Total 2 Páginas
		
PAD1 Hoja de datos, Descripción, Manual
Linear Integrated Systems
PAD SERIES
PICO AMPERE DIODES
FEATURES
DIRECT REPLACEMENT FOR SILICONIX PAD SERIES
REVERSE BREAKDOWN VOLTAGE
REVERSE CAPACITANCE
ABSOLUTE MAXIMUM RATINGS1
BVR -30V
Crss 2.0pF
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-65 to +150 °C
Operating Junction Temperature
-55 to +135 °C
Maximum Power Dissipation
Continuous Power Dissipation (PAD)
300mW
Continuous Power Dissipation (J/SSTPAD)
350mW
Maximum Currents
Forward Current (PAD)
50mA
Forward Current (J/SSTPAD)
10mA
PAD1,2,5
TO-72
BOTTOM VIEW
2K
A 1 3C
JPAD
TO-92
BOTTOM VIEW
KA
12
PAD*
TO-72
BOTTOM VIEW
2 K*
A1
SSTPAD
SOT-23
TOP VIEW
K1
K2
3A
* Cathode tied to Case
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
MIN TYP MAX
BVR
Reverse Breakdown
Voltage
ALL PAD
ALL SSTPAD
ALL JPAD
-45
-30
-35
VF Forward Voltage
Crss Total Reverse Capacitance
PAD1,5
All Others
0.8 1.5
0.5 0.8
1.5 2
UNITS
V
pF
CONDITIONS
IR = -1µA
IF = 5mA
VR = -5V, f = 1MHz
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL CHARACTERISTIC
PAD2
JPAD2
SSTPAD2
(SST/J)PAD1
-1
(SST/J)PAD2
-2
(SST/J)PAD5
-5
-5
-5
(SST/J)PAD10
-10
-10
-10
IR
Maximum Reverse
Leakage Current2
(SST/J)PAD20
-20
-20
-20
(SST/J)PAD50
-50
-50
-50
(SST/J)PAD100
-100
-100
(SST/J)PAD200
-200
(SST/J)PAD500
-500
UNITS
pA
CONDITIONS
VR = -20V
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

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