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PDF PA2423G Data sheet ( Hoja de datos )
| Número de pieza | PA2423G | |
| Descripción | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | |
| Fabricantes | SiGe Semiconductor Inc. | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de PA2423G (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Applications
Bluetoothtm Class 1
USB Dongles
Laptops
Access Points
Cordless Piconets
Flip chip and chip-on-board applications
Features
+22.5 dBm at 47% Power Added Efficiency
Low current 80 mA typical @ Pout=+20 dBm
Temperature stability better than 1dB
Power-control and Power-down modes
-40C to +85C temperature range
Gold bump bare die (0.63mm x 0.96mm)
Ordering Information
Part
PA2423G
PA2423G-EV
Package
Gold bump bare
die
Evaluation kit
Shipping
Method
Diced wafer
Waffle pack
Product Description
A monolithic, high-efficiency, silicon-germanium
power amplifier IC, the PA2423G is designed for
Class 1 Bluetoothtm 2.4 GHz radio applications. It
delivers +22.5 dBm output power with 47% power-
added efficiency – making it capable of
overcoming insertion losses of up to 2.5 dB
between amplifier output and antenna input in
Class 1 Bluetoothtm applications.
The amplifier features:
an analog control input for improving PAE at
reduced output power levels;
a digital control input for controlling power up
and power down modes of operation.
An on-chip ramping circuit corrects the turn-on/off
switching of amplifier output with less than 3 dB
overshoot, meeting the Bluetoothtm specification 1.1.
The PA2423G operates at 3.3V DC. At typical
output power level (+22.5 dBm), its current
consumption is 120 mA.
The silicon/silicon-germanium structure of the
PA2423G provides high thermal conductivity and
a subsequently low junction temperature. This
device is capable of operating at a duty cycle of
100 percent.
Functional Block Diagram
IN
Stage 1
GND
VCTL
Bias Generator
Interstage
Match
VCC1
VCC0 VRAMP
Ramp
Circuitry
Stage 2
OUT/ VCC2
GND
DOC # 05PDS003 Rev 5
07/26/2001
Page 1
1 page  
PA2423G
2.4 GHz Bluetooth Class 1 Power Amplifier IC
Preliminary Information
Gold Bump Bare Die – Bottom View
This drawing shows the gold bump bare die when viewed from the bottom of the die (without gold bumps).
This view and pintout orientation should be used for flip chip mounting – top surface of die (with gold bumps)
is inverted to make contact with PCB.
960µm ± 20µm
12 11 10 9
8
60±0µm
60±0µm
60±0µm
60±0 µm
100±0µm
100±0µm
1
45o
460±0µm
100±0µm
142µm±10µm
100±0µm
60±0µm
60±0 µm
100±0 µm
60±0µm
60±0µm
7
2 3 4 5 6 65µm±10µm
(X=0,Y=0)
DOC # 05PDS003 Rev 5
07/26/2001
Page 5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet PA2423G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PA2423 | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information | SiGe Semiconductor Inc. |
| PA2423 | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | SiGe Semiconductor Inc. |
| PA2423 | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | SiGe Semiconductor Inc. |
| PA2423G | 2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information | SiGe Semiconductor Inc. |
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