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PDF TGP6336-EEU Data sheet ( Hoja de datos )
| Número de pieza | TGP6336-EEU | |
| Descripción | 6 - 18 GHz Phase Shifter | |
| Fabricantes | TriQuint Semiconductor | |
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Product Data Sheet
6 - 18 GHz Phase Shifter
TGP6336-EEU
Key Features and Performance
• 6 to 18 GHz Frequency Range
• 5-Bit Phase Shifter
• On-Chip CMOS-Compatible Drivers
• 9 dB Typical Insertion Loss at Midband
• 2:1 Typical Input SWR: 2.6:1 Typical
Output SWR
• 3.556 x 2.540 x 0.1016 mm (0.140 x
0.100 x 0.004 in.)
Description
The TriQuint TGP6336-EEU is a GaAs MMIC 5-bit phase shifter which operates
from 6 to 18 GHz. Phase can be shifted from 0 to 348.75 degrees in 11.25 degree
steps. Control bias voltages are 0 and 5 V. The insertion loss is typically 9 dB.
The TGP6336-EEU features on-chip CMOS-compatible drivers. The FET based
phase shifter offers wide band performance and small size for use in T/R modules
for EW applications.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire-bonding
processes. Ground is provided to the circuitry through vias to the backside
metallization.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
1
1 page  
Product Data Sheet
TGP6336-EEU
RF CHARACTERISTICS
PARAMETER
IL Insertion loss (all states)
SWR(in) Input standing w ave ratio
SWR(out) Output standing w ave ratio
P1dB(in) Input pow er at 1–dB gain compression
TEST CONDITIONS
TYP UNIT
f = 6 - 18 GHz
9 dB
f = 6 - 18 GHz (all states) 2.0:1
-
f = 6 - 18 GHz (all states) 2.6:1
-
see next table
PHASE
SHIFT
(degrees)
-11.25
-22.5
-45
-90
-180
-348.75
TYPICAL RELATIVE PHASE SHIFT
at 6GHz
(degrees)
at 12GHz
(degrees)
at 18GHz
(degrees)
-13±2
-13.5±2
13±4
-23±2
-55±4
-107±5
-214±4
-416±8
-23±2
-43±3
-84±7
-165±8
-326±9
32±4
58±7
99±8
186±16
380±11
TYPICAL INPUT POWER at
1–dB GAIN COMPRESSION at
MIDBAND(dBm)
26
27
26
25
25
25
V+ = 6 V, V- = -5 V, TA = 25oC
RECOMMENDED BIAS
NETWORK
All bias resistors have a nominal value of 25-Ohms.
RF connections: Bond one 1-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and
RF Output for optimum RF performance.
Close placement of external components is essential for resonant-free performance.
Refer to TriQuint’s Gallium Arsenide Products Designers’ Information on our website under Application
Information.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
5
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TGP6336-EEU.PDF ] | |
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