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PDF TGF1350 Data sheet ( Hoja de datos )
| Número de pieza | TGF1350 | |
| Descripción | Discrete MESFET | |
| Fabricantes | TriQuint Semiconductor | |
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Discrete MESFET
Product Data Sheet
TGF1350-SCC
Key Features and Performance
• 0.5 um x 300 um FET
• 1.5 dB Noise Figure with 11dB
Associated Gain at 10 GHz
• 2.5 dB Noise Figure with 7 dB
Associated Gain at 18 GHz
• All-gold Metallization for High Reliability
• Recessed Gate Structure
Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The TGF1350-SCC is readily assembled using automated equipment. Die attach
should be accomplished with conductive epoxy only. Eutectic attach is not
recommended .
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
1
1 page  
TYPICAL MODEL
PARAMETERS
P ARAMETER
r s So u rce res is t an ce
r d Drain res is tance
r g Gat e res is t an ce
g m Tran s co n d u ct an ce
r ds Drain–to–s ource res is tance
r i In p u t res is t an ce
C g s Gat e–t o –s o u rce cap acit an ce
C g d Gat e–t o –d rain cap acit an ce
Cds Drain–to–s ource capacitance
τ Tim e co n s t an t
Product Data Sheet
TGF1350-SCC
VALUE
5.62
4.48
4.68
52.32
224
1.30
0.351
0.0159
0.0877
2.33
S TANDARD
DEVIATION
0.6
0.4
0.5
6
40
1
0.027
0.0037
0.0095
0.1
UNIT
Ω
Ω
Ω
mS
Ω
Ω
pF
pF
pF
ps
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during
handing, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TGF1350.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TGF1350 | Discrete MESFET | TriQuint Semiconductor |
| TGF1350-SCC | Discrete MESFET | TriQuint Semiconductor |
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