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PDF TGC1411 Data sheet ( Hoja de datos )
| Número de pieza | TGC1411 | |
| Descripción | 0.3 - 10 GHz Downconverter | |
| Fabricantes | TriQuint Semiconductor | |
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Advance Product Information
0.3 - 10 GHz Downconverter
TGC1411-EPU
Key Features and Performance
• 0.25um pHEMT Technology
• 0.3-10 GHz RF/LO Frequency Range
• 0.15-2.5 GHz IF Frequency Range
• Nominal Conversion Gain of 12 dB
• Bias 3-5V @ 26 mA
• Chip Dimensions 1.8 mm x 2.6mm
Primary Applications
The TriQuint TGC1411-EPU is a double balanced
MMIC mixer design using TriQuint’s proven 0.25 um
Power pHEMT process to support a variety of
communication system applications including satellite.
The double balanced design consists of an integrated
Gilbert cell mixer core, RF/LO baluns, differential
combiner, and output driver amplifier. The TGC1411
may be operated from a single +3 V to +5 V power
supply with typical current draw of 26 mA. The
nominal LO power requirement is -5 dBm. The
TGC1411 may also be operated as an up-converter.
• Satellite Systems
• Point-to-Point Radio
TGCT1G41A11411 Typical Down-Conversion Gain
LSB, +5.0V, LO = -5dBm, +25C
18
15
12 IF=151MHz
IF=501MHz
IF=1001MHz
IF=1501MHz
9 IF=2001MHz
IF=2501MHz
The TGC1411 requires a minimum of off-chip
components employing only a 100 pF off-chip bypass
capacitor for the power supply line. No additional off-
chip RF matching components are required. Each
device is 100% DC and RF tested on-wafer to ensure
performance compliance. The device is available in
chip form.
RF IF
IN OUT
6
3
0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1
RF Frequency (GHz)
TGCT1G4A111411 Typical P1dB and SSB Noise Figure
LSB, +5.0V, LO = -5dBm, +25C
1 18
0 17
-1 16
-2 P1dB
-3
15
14
-4 13
-5 12
-6
Noise
11
Figure
-7 10
-8 9
LO
IN
-9 8
0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1
RF Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
1
1 page  
Advance Product Information
VD
100 pF
RF
IN
IF
OUT
LO
IN
Reflow process assembly notes:
Chip Assembly and Bonding Diagram
• AuSn (80/20) solder with limited exposure to temperatures at or above 300♣C
• alloy station or conveyor furnace with reducing atmosphere
• no fluxes should be utilized
• coefficient of thermal expansion matching is critical for long-term reliability
• storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
• vacuum pencils and/or vacuum collets preferred method of pick up
• avoidance of air bridges during placement
• force impact critical during auto placement
• organic attachment can be used in low-power applications
• curing should be done in a convection oven; proper exhaust is a safety concern
• microwave or radiant curing should not be used because of differential heating
• coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
• thermosonic ball bonding is the preferred interconnect technique
• force, time, and ultrasonics are critical parameters
• aluminum wire should not be used
• discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
• maximum stage temperature: 200♣C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
5
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| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TGC1411.PDF ] | |
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