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PDF TGA9083 Data sheet ( Hoja de datos )
| Número de pieza | TGA9083 | |
| Descripción | Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGA9083-EEU
9083Power Amplifier
q 6.5 to 11.5- GHz Frequency Range
q 5-Watt Output Power at 7V , 6-W at 8V, 8-W at 9 Volt Drain Bias
q 19-dB Typical Small Signal Gain
q 40% Power Added Efficiency at 7V, 35% PAE at 9 Volt Drain Bias
q 12-dB Typical Input Return Loss, 9- dB Typical Output Return Loss
q On-Chip Active Gate Bias Circuit Option Simplifies Biasing
q 4, 521 x 3,048 x 0,100 mm (0.178 x 0.120 x 0.004 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA9083 - EEU is a monolithic power amplifier which operates from 6.5 to
11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage power
amplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. The
TGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts.
Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40
percent. Typical small signal gain is 1 9-dB. In balanced configuration, 12 Watts of output power is
achievable with 40 % PAE.
The TGA9083-EEU is fabricated using TI’s 0.25um T-gate power pHEMT process. This device offer s
either standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing . The
active gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiency
over 6.5 to 11.5 GHz mak e it a viable power amp solution in applications such as point-to-point radio ,
phased-array radar, and telecommunications.
Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachment
methods as well as with thermocompression and thermosonic wire -bonding processes.
The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment.
Ground is provided to the circuitr y through vias to the backside metallization.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
1 page  
TGA9083-EEU
TYPICAL S-PARAMETERS
Frequency
(GHz)
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
8.0
8.1
8.2
8.3
8.4
8.5
8.6
8.7
8.8
8.9
9.0
9.1
9.2
9.3
9.4
9.5
9.6
9.7
9.8
9.9
10.0
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
10.9
11.0
11.1
11.2
11.3
11.4
11.5
S11
dB ANG(°)
-14.31
-78.1
-13.64
-94.1
-13.08
-107.7
-12.72
-118.8
-12.36
-128.4
-12.15
-136.9
-11.94
-144.3
-11.81
-151.0
-11.71
-157.2
-11.62
-163.0
-11.54
-168.6
-11.48
-174.6
-11.46
179.6
-11.49
173.5
-11.56
167.5
-11.64
161.1
-11.84
154.7
-12.00
148.0
-12.27
140.8
-12.59
133.2
-13.03
124.8
-13.55
115.8
-14.20
106.2
-15.00
95.7
-15.96
84.3
-16.95
72.4
-18.19
59.3
-19.31
45.4
-20.44
29.9
-21.28
14.1
-21.77
-3.6
-21.75
-19.6
-21.45
-35.6
-20.72
-48.2
-19.95
-58.9
-19.15
-68.3
-18.33
-76.7
-17.51
-84.1
-16.67
-91.4
-15.95
-98.1
-15.23
-104.5
-14.62
-110.8
-13.99
-117.4
-13.41
-123.9
-12.87
-130.8
-12.39
-137.8
-11.97
-145.6
-11.57
-153.5
-11.21
-162.1
-10.91
-171.2
-10.63
179.2
S21
dB ANG(°)
21.77
168.2
21.69
146.0
21.42
125.7
21.09
107.0
20.74
89.7
20.40
73.4
20.12
57.9
19.88
43.1
19.69
28.9
19.55
14.9
19.48
1.3
19.44
-12.1
19.45
-25.4
19.51
-38.6
19.61
-51.8
19.75
-65.0
19.93
-78.4
20.16
-92.1
20.41
-106.1
20.67
-120.4
20.93
-135.0
21.18
-150.0
21.39
-165.3
21.56
179.2
21.67
163.6
21.72
147.9
21.71
132.2
21.63
116.7
21.49
101.3
21.30
86.3
21.07
71.4
20.81
56.8
20.52
42.5
20.24
28.3
19.95
14.3
19.67
0.4
19.38
-13.4
19.11
-27.2
18.86
-41.1
18.61
-55.0
18.37
-69.0
18.13
-83.0
17.89
-97.2
17.65
-111.8
17.42
-126.3
17.17
-141.0
16.93
-156.2
16.64
-171.4
16.34
173.1
16.00
157.3
15.63
141.4
S12
dB ANG(°)
-64.33
88.1
-60.56
81.2
-58.66
70.2
-57.67
59.6
-57.01
48.2
-56.72
37.4
-56.97
28.1
-57.08
20.2
-57.77
11.7
-57.76
4.5
-57.76
-5.0
-57.71
-14.8
-58.13
-28.3
-58.49
-39.3
-58.82
-50.7
-58.75
-62.5
-59.10
-79.3
-59.09
-95.6
-59.22
-113.4
-58.89
-133.1
-58.80
-149.5
-58.78
-170.2
-58.42
173.1
-58.06
152.0
-57.95
133.7
-57.57
114.0
-57.49
93.9
-57.13
77.9
-57.62
59.4
-57.57
40.5
-57.59
20.7
-57.61
3.4
-57.36
-15.4
-57.08
-32.3
-56.69
-51.1
-56.18
-64.5
-55.71
-80.0
-54.67
-92.3
-54.34
-106.2
-53.49
-119.4
-53.00
-133.6
-52.35
-144.6
-51.80
-155.4
-51.56
-166.5
-51.12
-178.6
-50.77
170.8
-50.69
159.1
-50.33
147.9
-50.57
136.5
-50.76
124.9
-50.93
112.2
TA = 25 ° C, VD= +8 V , ID= 1.1 A
Reference planes for S -parameter data include bond wires as specified in the “Recom mended Assembly Diagram.”
S22
dB ANG(°)
-14.44
114.4
-14.21
89.3
-14.24
69.1
-14.50
50.1
-14.91
34.3
-15.53
17.3
-16.28
1.9
-16.99
-14.2
-17.83
-30.1
-18.52
-46.3
-19.16
-61.9
-19.83
-75.8
-20.05
-88.6
-20.59
-98.0
-20.68
-105.8
-20.89
-108.7
-20.52
-109.5
-19.67
-108.5
-18.60
-107.9
-17.09
-109.5
-15.59
-112.4
-14.14
-117.2
-12.89
-124.4
-11.82
-132.0
-10.98
-141.0
-10.41
-150.3
-9.98
-160.1
-9.83
-170.4
-9.84
179.4
-10.03
168.5
-10.44
158.1
-10.91
147.1
-11.62
136.0
-12.32
124.6
-13.23
112.1
-14.16
100.1
-15.11
86.9
-16.20
73.2
-17.11
59.2
-18.22
43.6
-19.22
28.4
-20.24
11.4
-21.37
-7.1
-22.33
-26.6
-23.12
-50.8
-23.74
-75.6
-23.25
-104.2
-22.17
-131.1
-20.63
-153.4
-18.89
-174.0
-17.29
168.8
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TGA9083.PDF ] | |
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