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PDF TGA8334-SCC Data sheet ( Hoja de datos )
| Número de pieza | TGA8334-SCC | |
| Descripción | 2 - 20 GHz Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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Product Data Sheet
2 - 20 GHz Power Amplifier
TGA8334-SCC
Key Features and Performance
• 2 to 20 GHz Frequency Range
• 0.4-W Output Power at 1 dB Gain
Compression at Midband
• Positive Gain Slope Across Frequency
• On-Chip Input DC-Blocking Capacitor
• 1.8:1 Input SWR at Midband, 1.3:1
Output SWR at Midband
• 8 dB Gain with +/- 1 dB Flatness
• 3.1750 x 1.8034 x 0.1524 mm (0.125 x
0.071 x 0.006 in.)
Description
The TriQuint TGA8334-SCC is a GaAs monolithic dual-gate distributed amplifier.
Small-signal gain is typically 8 dB with positive gain slope across the band. Input
and output return loss is typically greater than 9.7 dB. Five 600um gatewidth FETs
provide more than 26 dB output power at 1 dB gain compression at midband.
Ground is provided to the circuitry through vias to the backside metallization.
The TGA8334-SCC is directly cascadable with other broadband TriQuint GaAs
amplifiers, such as the TGA8300-SCC, TGA8622-SCC, and TGA8220-SCC. This
general power amplifier is suitable for a variety or wide-band applications such as
distributed networks, logging stages and oscillator buffers.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attachment methods as well as the thermocompression and thermosonic wire
bonding processes. The TGA8334-SCC is supplied in chip form and is readily
assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
1
1 page  
Product Data Sheet
TGA8334-SCC
RF CHARACTERISTICS
Gp
P1dB
∆Gp
S WR(in)
S WR(o ut)
IP 3
P ARAMETER
Sma ll-s ignal pow e r gain
Output pow er a t 1–dB gain
compre s s ion
Gain fla tne s s
Input s ta nding w ave ratio
Output s tanding w ave ra tio
Output third–orde r inte rce pt point
TES T C ONDITIONS
f = 2 to 20 GHz
f = 2 to 14 GHz
f =14 to 18 GHz
f = 2 to 20 GHz
f = 2 GHz
f = 9 GHz
f =18 GHz
f = 2 GHz
f = 9 GHz
f =18 GHz
f = 2 GHz
f = 9 GHz
f =18 GHz
TYP
8
26
25
±1
1.6:1
1.7:1
1.1:1
2.0:1
1.4:1
1.5:1
38
41
38
UNIT
dB
dBm
dB
-
-
-
-
-
-
dBm
DC CHARACTERISTICS
V D = 8 V, VCNTR = 1 V, I D = 50% IDSS, T A = 25oC,
P ARAMETER
TES T C ONDITIONS
M IN M AX UNIT
IDSS Total zero–gate –voltage drain curre nt a t s a tura tion V DS = 0.5 V to 3.5 V, VGS = 0 V 630 1170 mA
TA = 25OC
VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC Autoprobe.
THERMAL
INFORMATION
P ARAMETER
TES T C ONDITION
NOM UNIT
RθJ C The rma l re s is ta nc e (c ha nne l to ba c ks ide ) VD = 8 V, ID = 50% IDS S , VCTRL = 1 V 18.7 °C/W
EQUIVALENT
SCHEMATIC
TriQuint Semiconductor Texas Phone: (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet TGA8334-SCC.PDF ] | |
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