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PDF TGA8310-SCC Data sheet ( Hoja de datos )
| Número de pieza | TGA8310-SCC | |
| Descripción | Low-Noise Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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T R I Q U I N T S E M I C ON D U C TO R, I N C.
TGA8310-SCC
8310Low-Noise Amplifier
q 2 to 20- GHz Frequency Range
q 3.5- dB Noise Figur e Midband
q 1.4:1 Typical Input/Output SWR
q 17.5- dBm Output Power at 1- dB Gain Compr ession
q 9- dB Typical Gain
q 4,115 x 2,362 x 0,102 mm (0.162 x 0.093 x 0.004 in.)
PHOTO ENLARGEMENT
DESCRIPTION
The TriQuint TGA8310 - SCC is a monolithic low - noise distributed amplifier, which operates
from 2 to 20- GHz. Noise figure is typically 4 - dB. Nine 122- µm gatewidth FETs typically provide
17.5-dBm of output power at 1 - dB gain compression and 9- dB typical small signal gain. Typical input
return loss is 17-dB from 2 to 20-GHz. Typical output return loss is 20-dB. Ground is provided to
the circuitry through vias to the backside metallization.
The TGA8310 - SCC low - noise distributed amplifier is suitable for a variety of wide - band electronic
warfare systems such as radar warning receivers, electronic counter-measures, decoys, jammers, and
phased array systems.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment
methods as well as the ther mocompression and thermosonic wir e- bonding processes. The
TGA8310 - SCC is supplied in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
1 page  
TGA8310-SCC
TYPICAL S -PARAMETERS
Frequency
(GHz)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
19.5
20.0
S 11
MAG
ANG(°)
0.31
-154
0.26
-175
0.21
169
0.18
155
0.15
145
0.12
137
0.10
134
0.08
135
0.07
143
0.07
153
0.08
162
0.10
162
0.12
157
0.13
152
0.14
145
0.14
137
0.14
127
0.14
116
0.12
109
0.11
100
0.08
99
0.07
107
0.06
128
0.07
147
0.09
150
0.11
144
0.12
130
0.12
121
0.13
112
0.14
99
0.12
87
0.09
81
0.08
95
0.07
79
0.04
88
0.04
92
0.03
86
S 21
MAG
ANG(°)
3.32
119
3.23
96
3.13
75
3.06
54
3.00
35
2.97
16
2.93
-3
2.93
-22
2.92
-41
2.93
-60
2.94
-79
2.95
-99
2.91
-118
2.90
-138
2.85
-157
2.83
-176
2.80
165
2.77
146
2.80
127
2.80
107
2.80
88
2.80
68
2.79
48
2.79
28
2.77
8
2.74
-13
2.73
-33
2.70
-54
2.65
-74
2.66
-94
2.70
-115
2.71
-138
2.61
-159
2.68
-180
2.67
156
2.65
133
2.64
110
S 12
MAG
ANG(°)
0.009
61
0.010
32
0.011
14
0.012
-6
0.013
-23
0.014
-42
0.014
-59
0.016
-76
0.018
-96
0.019
-115
0.021
-133
0.022
-153
0.024
-170
0.025
173
0.027
156
0.028
140
0.029
123
0.029
109
0.032
89
0.032
73
0.033
56
0.035
37
0.035
18
0.037
0
0.038
-21
0.039
-41
0.041
-58
0.044
-76
0.046
-96
0.049
-115
0.052
-134
0.056
-155
0.053
-175
0.056
168
0.058
142
0.054
119
0.051
102
S 22
MAG
ANG(°)
0.22
-19
0.19
-62
0.17
-98
0.16
-132
0.14
-162
0.12
169
0.10
143
0.07
116
0.04
87
0.02
44
0.02
-92
0.04
-143
0.05
-170
0.05
164
0.05
133
0.05
95
0.05
52
0.06
17
0.07
-25
0.08
-54
0.08
-82
0.07
-109
0.05
-141
0.03
153
0.04
53
0.08
13
0.12
-14
0.16
-42
0.18
-70
0.18
-99
0.16
-131
0.13
-166
0.08
145
0.13
57
0.24
-25
0.37
-87
0.34
-149
GAIN
(dB)
10.4
10.2
9.9
9.7
9.6
9.4
9.3
9.3
9.3
9.3
9.4
9.4
9.3
9.2
9.1
9.1
8.9
8.8
8.9
9.0
8.9
8.9
8.9
8.9
8.8
8.7
8.7
8.6
8.5
8.5
8.6
8.7
8.3
8.6
8.5
8.5
8.4
TA = 25°C, VD = 5 V, VCTRL = 1.5 V, I+ = 60 mA
Reference planes for S -parameter data include bond wires as specified in the “Recommended Assembly
Diagram.” The S -parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
5
5 Page 
TGA8310-SCC
MECHANICAL DRAWING
2,3622
(0.0930)
0,1524 0,5944
(0.0060) (0.0234)
1,7882
(0.0704)
4
1,7170
(0.0676)
5
3,9746
(0.1564)
1,9456
(0.0766)
1,2370
(0.0487)
0,9423
(0.0371)
0,7264
(0.0286)
3
2
1
6 0,9119
(0.0359)
7 0,6960
(0.0274)
0
0,1397
0 (0.0055)
8
2,4155
(0.0951)
0,2515
(0.0099)
4,1148
(0.1620)
Units: millimeters (inches)
Thickness: 0,1016 (0.004) (r eference only)
Chip edge to bond pad dimensions are shown to center of bond pad.
Chip size ±0,0508 (0.002)
Bond pad #1 (RF Input):
Bond pad #2 (RF Input):
Bond pad #3 (VCTRL):
Bond pad #4 (VD):
Bond pad #5 (V+):
Bond pad #6 (RF Output):
Bond pad #7 (RF Output):
Bond pad #8 (VG1):
0,0940 x 0,0991 (0.0037 x 0.0039)
0,0940 x 0,0991 (0.0037 x 0.0039)
0,1016 x 0,1524 (0.0040 x 0.0060)
0,1321 x 0,2108 (0.0052 x 0.0083)
0,2032 x 0,1016 (0.0080 x 0.0040)
0,0940 x 0,0991 (0.0037 x 0.0039)
0,0940 x 0,0991 (0.0037 x 0.0039)
0,0965 x 0,0965 (0.0038 x 0.0038)
TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TGA8310-SCC.PDF ] | |
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