(PDF) TGA1342-EPU Datasheet - 2 -20 GHz Wideband AGC Amplifier

Número de pieza	TGA1342-EPU
Descripción	2 -20 GHz Wideband AGC Amplifier
Fabricantes	TriQuint Semiconductor
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No Preview Available ! Advance Product Information 2 -20 GHz Wideband AGC Amplifier TGA1342-EPU Typical Electrical Characteristics Key Features and Performance • 0.5 um MESFET Technology • 9 dB Nominal Gain • 3.5 dB NF Typical Midband • 17.5 dBm Nominal Pout @ P1dB • Bias 5-8V @ 60 mA • Dimensions 3.378mm x 2.032mm Primary Applications • Wideband Gain Block Amplifier • Wideband Low Noise Amplifier S21 Gain (dB) VD=5v Id=60ma Temp=25C 12.0 10.0 8.0 6.0 4.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) S11 Input Return Loss (dB) VD=5v Id=60ma Temp=25C 0.0 -10.0 -20.0 -30.0 -40.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 6.0 5.0 4.0 3.0 2.0 1.0 2 Noise Figure (dB) VD=6v Id=60ma Temp=25C 4 6 8 10 12 14 16 18 Frequency (GHz) S22 Output Return Loss (dB) VD=5v Id=60ma Temp=25C 0.0 -10.0 -20.0 -30.0 -40.0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 rev 11/10/98 1 page

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PDF TGA1342-EPU Data sheet ( Hoja de datos )