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PDF TGA1073C-SCC Data sheet ( Hoja de datos )
| Número de pieza | TGA1073C-SCC | |
| Descripción | 36 - 40 GHz Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
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Product Datasheet
August 15, 2000
36 - 40 GHz Power Amplifier
TGA1073C-SCC
Key Features and Performance
• 0.25um pHEMT Technology
• 36-40 GHz Frequency Range
• 26 dBm Nominal Pout @ P1dB, 38GHz
• 15 dB Nominal Gain
• Bias 5-7V @ 240 mA
• Chip Dimensions 2.4 mm x 1.45 mm
Primary Applications
• Point-to-Point Radio
The TriQuint TGA1073C-SCC is a two stage PA MMIC
design using TriQuint’s proven 0.25 µm Power pHEMT
process to support a variety of millimeter wave
applications including point-to-point digital radio and
point-to-multipoint systems.
•
The two-stage design consists of two 400 µm input
devices driving four 400 µm output devices.
Point-to-Multipoint Radio
TGA1073C Typical RF Performance (Fixtured)
20
15
S21
10
5
The TGA1073C provides 24 dBm of output power at
1dB gain compression and 26 dBm saturated output
power across the 36-40 GHz with a typical small signal
gain of 15 dB.
The TGA1073C requires a minimum of off-chip
components. Each device is 100% DC and RF tested
on-wafer to ensure performance compliance. The
device is available in chip form.
0
-5
-10
S22
-15
-20
S11
-25
33 34 35 36 37 38 39 40 41 42 43
Frequency (GHz)
Typical Performance, 36-40 GHz
Parameter
Small Signal Gain
Gain Flatness
Output P1dB
Saturated Output Power
Saturated PAE
Output OTOI
IMR3 @SCL = P1dB- 10dB
Input Return Loss
Output Return Loss
Reverse Isolation
Quiescent Current
Unit
dB
dBpp
dBm
dBm
%
dBm
dBc
dB
dB
dB
mA
+5V Supply
24
26
23
225
+6V Supply
15
1
25
27
22
34
34
-10
-8
-35
240
+7V Supply
26
28
20
260
TGA1073C Typical RF Performance (Fixtured)
33
30 P1dB
27
24
21
VD = +5V, +6V, +7V
18
15
12
IMR3 @ VD = +6V
9
6
3
36 37 38 39 40 41
Frequency (GHz)
50
48
46
44
42
40
38
36
34
32
30
42
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
1
1 page  
Product Datasheet
TGA1073C-SCC
1µF Cap on
Supply Line
RF In
VG
0.01µF
100pF
100pF
100pF
100pF
0.01µF
VD
Chip Assembly and Bonding Diagram
RF Out
1µF Cap on
Supply Line
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
5
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TGA1073C-SCC.PDF ] | |
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