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PDF TEFT4300 Data sheet ( Hoja de datos )

Número de pieza TEFT4300
Descripción Silicon NPN Phototransistor
Fabricantes Vishay Telefunken 
Logotipo Vishay Telefunken Logotipo



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No Preview Available ! TEFT4300 Hoja de datos, Descripción, Manual

Silicon NPN Phototransistor
Description
TEFT4300 is a high speed and high sensitive silicon
NPN epitaxial planar phototransistor in a standard T–1
(ø 3 mm) plastic package.
yThe epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with l p 900nm).
The plastic lens provides a wide viewing angle of ±
30°.
Features
D High radiant sensitivity
D Fast response times
D T1 (ø 3 mm) plastic package with IR filter
D Additional polarity sign
D Wide viewing angle ϕ = ± 30°
D Suitable for near infrared radiation
D Matches with TSUS4300 GaAs infrared emitter
Applications
Optical switches
Counters and sorters
Interrupters
Tape and card readers
Encoders
Position sensors
TEFT4300
Vishay Telefunken
94 8637
Absolute Maximum Ratings
Tamb = 25_C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
xtp/T = 0.5, tp 10 ms
xTamb 55 °C
xt 3 s, 2 mm from case
Symbol
VCEO
VECO
IC
ICM
Ptot
Tj
Tstg
Tsd
RthJA
Value
70
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°C
°C
°C
K/W
Document Number 81549
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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TEFT4300 pdf
Ozone Depleting Substances Policy Statement
TEFT4300
Vishay Telefunken
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81549
Rev. 2, 20-May-99
www.vishay.de FaxBack +1-408-970-5600
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