DataSheet.es    


PDF TEA1610T Data sheet ( Hoja de datos )

Número de pieza TEA1610T
Descripción Zero-voltage-switching resonant converter controller
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



Hay una vista previa y un enlace de descarga de TEA1610T (archivo pdf) en la parte inferior de esta página.


Total 21 Páginas

No Preview Available ! TEA1610T Hoja de datos, Descripción, Manual

TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Rev. 03 — 26 March 2007
Product data sheet
1. General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion
Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a
zero-voltage switching resonant converter. The IC provides the drive function for
two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift
circuit, an oscillator with accurately-programmable frequency range, a latched shut-down
function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through
a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains
voltages.
VDD
TEA1610
VHS
bridge voltage
supply
(high side)
MOSFET
SWITCH
HALF-
BRIDGE
CIRCUIT
RESONANT
CONVERTER
signal
ground
Fig 1. Basic configuration
power ground
mgu336
2. Features
I Integrated high voltage level-shift
function
I Integrated high voltage bootstrap diode
I Low start-up current (green function)
I Adjustable dead time
I Transconductance error amplifier for
ultra high-ohmic regulation feedback
I Latched shut-down circuit for
overcurrent and overvoltage protection
I Adjustable minimum and maximum
frequencies
I Undervoltage lockout

1 page




TEA1610T pdf
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
8. Functional description
8.1 Start-up
When the applied voltage at VDD reaches VDD(initial) (see Figure 5), the low side power
switch is turned-on while the high side power switch remains in the non-conducting state.
This start-up output state guarantees the initial charging of the bootstrap capacitor (Cboot)
used for the floating supply of the high side driver.
During start-up, the voltage on the frequency capacitor (Cf) is zero and defines the
start-up state. The output voltage of the error amplifier is kept constant (typ. 2.5 V) and
switching starts at about 80 % of the maximum frequency at the moment pin VDD reaches
the start level.
The start-up state is maintained until VDD reaches the start level (13.5 V), the oscillator is
activated and the converter starts operating.
VDD
0
GH-SH
0
GL
0
Fig 5. Start-up
VDD(start)
VDD(initial)
t mgt998
TEA1610T_P_3
Product data sheet
Rev. 03 — 26 March 2007
© NXP B.V. 2007. All rights reserved.
5 of 21

5 Page





TEA1610T arduino
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
11. Characteristics
Table 6. Characteristics
All voltages are referred to the ground pins which must be connected externally; positive currents flow into the IC; VDD = 13 V
and Tamb = 25 °C; tested using the circuit shown in Figure 10, unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
High voltage pins VDD(F), GH and SH
IL
leakage current
VDD(F), VGH and VSH = 600 V
-
-
30 µA
Supply pin VDD
VDD(initial)
supply voltage for
low side on; high side off
defined driver output
- 45V
VDD(start)
VDD(stop)
VDD(hys)
start oscillator voltage
stop oscillator voltage
start-stop hysteresis
voltage
12.9 13.4 13.9 V
9.0 9.4 9.8 V
3.8 4.0 4.2 V
VDD(sdc)
VDD(reset)
IDD
shut-down clamp
voltage
reset voltage
supply current:
start-up
low side off; high side off;
IDD = 1 mA
low side on; high side off
Cf = 100 pF; IIFS = 0.5 mA;
IIRS = 50 µA; Co = 200 pF
low side off; high side off;
VDD = 9 V
11.0
4.5
[1]
130
12.0
5.3
180
13.0
6.0
220
V
V
µA
operating
- 2.4 - mA
shut-down
- 130 180 µA
Reference voltage on pin VREF
VREF
reference voltage
IREF current capability
Zo(VREF)
output impedance
-----V----R-T--E---F--
temperature
coefficient
IREF = 0 mA
source only
IREF = 1 mA
IREF = 0 mA; Tj = 25 to 150 °C
2.9 3.0 3.1
1.0 -
-
- 5.0 -
- 0.3 -
V
mA
mV/K
Current controlled oscillator pins IRS, IFS, CF
ICF(ch)(min) minimum CF charge IIRS = 15 µA; VCF = 2 V
current
ICF(ch)(max) maximum CF charge IIRS = 200 µA; VCF = 2 V
current
VIRS
ICF(dis)(min)
voltage on pin IRS
minimum CF
discharge current
IIRS = 200 µA
IIRS = 50 µA; VCF = 2 V
ICF(dis)(max) maximum CF
discharge current
IIFS = 1 mA; VCF = 2 V
VIFS
fbridge(min)
voltage on pin IFS
minimum bridge
frequency (for stable
operation)
IIFS = 1 mA
CF = 100 pF; IIFS = 0.5 mA;
IIRS = 50 µA; fbridge = -f---O--2--S---C-
28 30 32 µA
340 380 420 µA
570 600 630 mV
47 50 53 µA
0.93 0.98 1.03 mA
570 600 630 mV
188 200 212 kHz
TEA1610T_P_3
Product data sheet
Rev. 03 — 26 March 2007
© NXP B.V. 2007. All rights reserved.
11 of 21

11 Page







PáginasTotal 21 Páginas
PDF Descargar[ Datasheet TEA1610T.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
TEA1610Zero-voltage-switching resonant converter controllerNXP Semiconductors
NXP Semiconductors
TEA1610PZero-voltage-switching resonant converter controllerPhilips
Philips
TEA1610PZero-voltage-switching resonant converter controllerNXP Semiconductors
NXP Semiconductors
TEA1610TZero-voltage-switching resonant converter controllerPhilips
Philips

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar