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Número de pieza TDA8542TS
Descripción 2 x 0.7 W BTL audio amplifier
Fabricantes NXP Semiconductors 
Logotipo NXP Semiconductors Logotipo



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No Preview Available ! TDA8542TS Hoja de datos, Descripción, Manual

INTEGRATED CIRCUITS
DATA SHEET
TDA8542TS
2 × 0.7 W BTL audio amplifier
Product specification
Supersedes data of 1997 Nov 17
File under Integrated Circuits, IC01
1998 Mar 25

1 page




TDA8542TS pdf
Philips Semiconductors
2 × 0.7 W BTL audio amplifier
Product specification
TDA8542TS
Headphone connection
A headphone can be connected to the amplifier using two
coupling capacitors for each channel. The common
GND pin of the headphone is connected to the ground of
the amplifier (see Fig.13). In this case the BTL/SE pin must
be either at a logic HIGH level or not connected at all.
The two coupling capacitors can be omitted if it is allowed
to connect the common GND pin of the headphone jack
not to ground, but to a voltage level of 12VCC. See Fig.4 for
the application diagram. In this case the BTL/SE pin must
be either at a logic LOW level or connected to ground.
If the BTL/SE pin is at a LOW level, the power amplifier for
the positive loudspeaker terminal is always in mute
condition.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCC
VI
IORM
Tstg
Tamb
Vsc
Ptot
supply voltage
input voltage
repetitive peak output current
storage temperature
operating ambient temperature
AC and DC short-circuit safe voltage
total power dissipation
operating
non-operating
MIN.
0.3
0.3
55
40
MAX.
UNIT
+18 V
VCC + 0.3 V
1A
+150
+85
10
°C
°C
V
1.12 W
QUALITY SPECIFICATION
In accordance with “SNW-FQ-611-E”.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
Note
1. See Section “Thermal design considerations”.
Table 1 Maximum ambient temperature at different conditions
VCC
RL
(V) ()
3.3 4
3.3 8
58
5 16
Note
1. See Section “Thermal design considerations”.
Po
(W)
2 × 0.65
2 × 0.55
2 × 1.2
2 × 0.70
CONDITIONS
in free air
VALUE
110(1)
UNIT
K/W
CONTINUOUS SINE WAVE DRIVEN
Pmax
(W)
1.12
0.60
1.33
0.80
Tamb(max)
(°C)
27(1)
84
(1)
62
1998 Mar 25
5

5 Page





TDA8542TS arduino
Philips Semiconductors
2 × 0.7 W BTL audio amplifier
Product specification
TDA8542TS
3
handbook, halfpage
P
(W)
2
1
(1) (2)
MBK449
handbook, h3alfpage
P
(W)
2
1
MBK450
0
0 4 8 VCC (V) 12
(1) RL = 8 .
(2) RL = 16 .
Fig.10 Worst case power dissipation as a function
of VCC.
0
0 0.5 1 1.5 2 2.5
Po (W)
Sine wave of 1 kHz; VCC = 5 V; RL = 8 .
Fig.11 P as a function of Po.
10
handbooVk,ohalfpage
(V)
1
MGD898
101
102
103
(1) (2) (3)
104
105
106
101
1
10 102
Vms (V)
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
(2) VCC = 5 V.
(3) VCC = 12 V.
Fig.12 Vo as a function of Vms.
1998 Mar 25
handbook,1h6alfpage
VMODE
(V)
12
8
4
0
04
MGL210
standby
mute
operating
8 12 16
VP (V)
Fig.13 VMODE as a function of VP.
11

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