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PDF TDA8060TS Data sheet ( Hoja de datos )

Número de pieza TDA8060TS
Descripción Satellite ZERO-IF QPSK down-converter
Fabricantes NXP Semiconductors 
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No Preview Available ! TDA8060TS Hoja de datos, Descripción, Manual

INTEGRATED CIRCUITS
DATA SHEET
TDA8060TS
Satellite ZERO-IF QPSK
down-converter
Product specification
Supersedes data of 1998 May 29
File under Integrated Circuits, IC02
1999 Aug 30

1 page




TDA8060TS pdf
Philips Semiconductors
Satellite ZERO-IF QPSK down-converter
Product specification
TDA8060TS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCC
Vi(max)
tsc(max)
Tamb
Tstg
Tj
PARAMETER
supply voltage
maximum input voltage on all pins
maximum short-circuit time
operating ambient temperature
storage temperature
junction temperature
MIN.
0.3
0.3
20
55
MAX.
+6.0
VCC
10
+85
+150
150
UNIT
V
V
s
°C
°C
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-a)
thermal resistance from junction to ambient
CONDITIONS
in free air
VALUE
120
UNIT
K/W
DC CHARACTERISTICS
Tamb = 25 °C; VCC = 5 V; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCC supply voltage
ICC supply current
PEN = 5 V
PEN = 0 V
Conversion stage
VI(RFA)
DC input voltage on pin RFA
VI(RFB)
DC input voltage on pin RFB
VO(IOUT)
DC output voltage on pin IOUT
VO(QOUT) DC output voltage on pin QOUT
Quadrature generator
VO(LOOUT) DC output voltage on pin LOOUT
VO(LOOUTC) DC output voltage on pin LOOUTC
Baseband stage
VI(IBBIN)
VI(QBBIN)
VO(IBBOUT)
VO(QBBOUT)
DC input voltage on pin IBBIN
DC input voltage on pin QBBIN
DC output voltage on pin IBBOUT
DC output voltage on pin QBBOUT
MIN.
4.75
63
60
TYP.
5.00
73
70
MAX.
5.25
83
80
UNIT
V
mA
mA
0.9 V
0.9 V
2.0 V
2.0 V
4.7 V
4.7 V
2.5 V
2.5 V
2.5 V
2.5 V
1999 Aug 30
5

5 Page





TDA8060TS arduino
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1 pF
RF
(2)
RF
1 pF
RFA 8
RFB 7
gain(1)
COMGAIN 4
100 nF
VCC(RF) RFGND VCC(LO1) LOGND1 VCC(LO2) LOGND2
6 9 16 15 19 22
LOW-PASS
FILTER(3)
100 nF
IOUT IBBIN
2 24
CONVERSION STAGE
×
100 MHz
I CONVERTER
SYM ASYM
LNA
Q CONVERTER
×
100 MHz
SYM ASYM
AMP
23 IBBOUT
LOW-PASS
FILTER(3)
BASEBAND
STAGE
AMP
14 QBBOUT LOW-PASS
FILTER(3)
0 to 5 V
QUADRATURE
GENERATOR
PEN 5
DIVIDE-BY-2
STABILIZED LO
PLL AND
AMPLIFIER
OSCILLATOR
TDA8060TS
20 21
LOOUT LOOUTC
18
TKA
6
1 pF
17
TKB
6
to PLL
synthesizer IC
BB835
20 (2×)
k
20
k
11 13
QOUT QBBIN
100 nF
LOW-PASS
FILTER(3)
Vtune
from PLL synthesizer IC
(1) Gain control voltage; minimum gain at 0.1 x VCC, maximum gain at 0.9 x VCC; 30 dB range.
(2) Differential RF input 950 to 2200 MHz; level = 22 to 52 dBm per channel.
(3) The filter input impedance is 400 minimum.
Fig.5 Application diagram.
1 VCC(BB1)
12 VCC(BB2)
3 BBGND1
10 BBGND2
MGM320
to
I channel
ADC
to
Q channel
ADC

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