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PDF TISP61512P Data sheet ( Hoja de datos )
| Número de pieza | TISP61512P | |
| Descripción | DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS | |
| Fabricantes | Power Innovations Limited | |
| Logotipo |  |
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Copyright © 1997, Power Innovations Limited, UK
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION
q Dual Voltage-Programmable Protectors.
- Wide 0 to -80 V Programming Range
- Low 5 mA max. Triggering Current
- High 150 mA min. Holding Current
q Rated for International Surge Wave Shapes
VOLTAGE
WAVE SHAPE
2/10 µs
1.2/50 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
TR-NWT-001089
ETS 300 047-1
RLM88/I3124
K17, K20, K21
TR-NWT-001089
ITSP
A
170
90
40
40
30
q Functional Replacements for
'61511D PACKAGE
(TOP VIEW)
(Tip) K1 1
8 K1 (Tip)
(Gate) G 2 7 A (Ground)
NC 3
6 A (Ground)
(Ring) K2
4
5 K2 (Ring)
MD6XAL
NC - No internal connection
Terminal typical application names shown in
parenthesis
'61512P PACKAGE
(TOP VIEW)
(Tip) K1
(Gate) G
1
2
8 K1 (Tip)
7 A (Ground)
DEVICE TYPE
LCP1511,
LCP1511D,
ATTL7591AS,
MGSS150-1
LCP1512,
LCP1512D,
ATTL7591AB,
MGSS150-2
PACKAGE TYPE
FUNCTIONAL
REPLACEMENT
TISP61511D
or order as
8-pin Small-Outline
TISP61511DR
for Taped and Reeled
8-pin Plastic DIP TISP61512P
NC 3
6 A (Ground)
(Ring) K2 4
5 K2 (Ring)
MD6XAJ
NC - No internal connection
Terminal typical application names shown in
parenthesis
device symbol
K1
G
K2
description
The TISP61511D and TISP61512P are dual
forward-conducting buffered p-gate overvoltage
protectors. They are designed to protect
monolithic Subscriber Line Interface Circuits,
SLICs, against overvoltages on the telephone
line caused by lightning, ac power contact and
induction. The TISP61511D and TISP61512P
limit voltages that exceed the SLIC supply rail
voltage.
A SD6XAE
Terminals K1, K2 and A correspond to the alternative
line designators of T, R and G or A, B and C. The
negative protection voltage is controlled by the voltage,
The SLIC line driver section is typically powered
VGG, applied to the G terminal.
from 0 V (ground) and a negative voltage in the region of -10 V to -70 V. The protector gate is connected to
this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the
protection voltage will track the negative supply voltage the overvoltage stress on the SLIC is minimised.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially
clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then
the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding
current of the crowbar prevents d.c. latchup.
These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high
reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the
loading on the SLIC supply during overvoltages caused by power cross and induction.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page  
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
TISP61511D, TISP61512P PARAMETER
DATA SHEET ALTERNATIVE
ALTERNATIVE PARAMETER
SYMBOL
SYMBOL
Non-repetitive peak on-state pulse current
ITSP
Off-state current
ID
Gate reverse current (with A and K terminals connected) IGAS
Off-state voltage
VD
Peak forward recovery voltage
Breakover voltage
VFRM
V(BO)
Gate voltage, (VGG is gate supply voltage referenced
to the A terminal)
VG
Repetitive peak off-state voltage
Repetitive peak gate-cathode voltage
Gate-cathode voltage
Gate-cathode voltage at breakover
Cathode-anode voltage
Anode-cathode capacitance
Cathode 1 terminal
VDRM
VGKM
VGK
VGK(BO)
VK
CAK
K1
IPP
IR
IRM
IRG
VR
VRM
VFP
VSGL
Vgate
VGATE
VS
VMLG
VMGL
VGL
VDGL
VLG
VGND/LINE
Coff
Tip
Peak pulse current
Reverse leakage current LINE/GND
Reverse leakage current GATE/LINE
Reverse voltage LINE/GND
Peak forward voltage LINE/GND
Dynamic switching voltage GND/LINE
GATE/GND voltage
Maximum voltage LINE/GND
Maximum voltage GATE/LINE
GATE/LINE voltage
Dynamic switching voltage GATE/LINE
LINE/GND voltage
Off-state capacitance LINE/GND
Tip terminal
Cathode 2 terminal
K2
Ring
Ring terminal
Anode terminal
A
GND
Ground terminal
Gate terminal
G
Gate
Gate terminal
Thermal Resistance, junction to ambient
RθJA
Rth (j-a)
Thermal Resistance, junction to ambient
electrical characteristics
APPLICATIONS INFORMATION
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction
temperature, TJ. Hence a characteristic value will depend on the junction temperature at the instant of
measurement. The values given in this data sheet were measured on commercial testers, which generally
minimise the temperature rise caused by testing.
application circuit
Figure 3 shows a typical TISP6151xx SLIC card protection circuit. The incoming line wires, R and T, connect
to the relay matrix via the series over-current protection. Fusible resistors, fuses and positive temperature
coefficient (PTC) resistors can be used for over-current protection. Resistors will reduce the prospective
current from the surge generator for both the TISP6151xx and the ring/test protector. The TISP7xxxF3
protector has the same protection voltage for any terminal pair. This protector is used when the ring generator
configuration maybe ground or battery-backed. For dedicated ground-backed ringing generators, the
TISP3xxxF3 gives better protection as its inter-wire protection voltage is twice the wire to ground value.
Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP6151xx protector. The protector gate
reference voltage comes from the SLIC negative supply (VBAT). A 220 nF gate capacitor sources the high
gate current pulses caused by fast rising impulses.
PRODUCT INFORMATION
5
5 Page 
TISP61511D, TISP61512P
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS
PROGRAMMABLE OVERVOLTAGE PROTECTORS
JULY 1995 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet TISP61512P.PDF ] | |
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