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PDF TISP4180 Data sheet ( Hoja de datos )
| Número de pieza | TISP4180 | |
| Descripción | SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS | |
| Fabricantes | Power Innovations Limited | |
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Hay una vista previa y un enlace de descarga de TISP4180 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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Copyright © 1997, Power Innovations Limited, UK
TISP4180
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DO-220 PACKAGE
(TOP VIEW)
DEVICE
‘4180
V(Z) V(BO)
VV
145 180
A(T)
B(R)
1
2
q Planar Passivated Junctions
Low Off-State Current < 10 µA
q Rated for International Surge Wave Shapes
WAVE SHAPE
8/20 µs
10/160 µs
10/560 µs
0.2/310 µs
10/700 µs
10/1000 µs
STANDARD
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
ITSP
A
150
60
45
38
50
50
50
50
Pin 1 is in electrical contact with the mounting base.
MD4XAB
device symbol
q UL Recognized, E132482
description
The TISP4180 is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices consist of a bidirectional
suppressor element connecting the A and B
terminals. They will suppress inter-wire voltage
transients.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page  
TISP4180
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
APRIL 1987 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
A and B terminals
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
TCS4MAC
1
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TCS4MAD
10
I(BO)
VD = ±50 V
1
IH
0·1 0·1
0·01
0·01
-25
3
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 4.
150
ON-STATE VOLTAGE
vs
JUNCTION TEMPERATURE
TCS4MAE
3
IT = ±5A
2
2
1
0
0
-25 0
25 50 75 100 125 150
TJ - Junction Temperature - °C
Figure 6.
0·001
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 5.
150
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
TCS4MAF
1.4
1.3
1.2
1.1
1.0
0·001
0·01
0·1
1
10 100
di/dt - Rate of Rise of Principle Current - A/µs
Figure 7.
PRODUCT INFORMATION
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet TISP4180.PDF ] | |
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