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PDF TISP3150F3 Data sheet ( Hoja de datos )

Número de pieza TISP3150F3
Descripción DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS
Fabricantes Power Innovations Limited 
Logotipo Power Innovations Limited Logotipo



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Copyright © 1997, Power Innovations Limited, UK
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘3125F3
‘3150F3
‘3180F3
VDRM
V
100
120
145
V(BO)
V
125
150
180
D PACKAGE
(TOP VIEW)
T1
NC 2
NC 3
R4
8G
7G
6G
5 G MDXXAE
NC - No internal connection
q Planar Passivated Junctions
Low Off-State Current < 10 µA
q Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/560 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
ITSP
A
175
120
60
45
38
50
50
50
35
q Surface Mount and Through-Hole Options
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
P PACKAGE
(TOP VIEW)
T1
8T
G2
7G
G3
R4
6G
5R
MDXXAF
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
SL PACKAGE
(TOP VIEW)
T1
G2
R3
device symbol
MDXXAG MD23AA
TR
q UL Recognized, E132482
description
These medium voltage dual symmetrical
transient voltage suppressor devices are
designed to protect ISDN and telecommunication
applications with ground backed ringing against
transients caused by lightning strikes and a.c.
power lines. Offered in three voltage variants to
meet battery and protection requirements they
are guaranteed to suppress and withstand the
listed international lightning surges in both
polarities. Transients are initially clipped by
breakdown clamping until the voltage rises to the
breakover level, which causes the device to
SD3XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1

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TISP3150F3 pdf
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
T and G, or R and G terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC3MAF
10
NORMALISED BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC3MAI
Normalised to V(BR)
1.2 I(BR) = 100 µA and 25°C
Positive Polarity
1
0·1
0·01
VD = 50 V
VD = -50 V
0·001
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 2.
150
1.1
V(BO)
1.0
0.9
-25
V(BR)
V(BR)M
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 3.
150
PRODUCT INFORMATION
5

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TISP3150F3 arduino
TISP3125F3, TISP3150F3, TISP3180F3
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
APPLICATIONS INFORMATION
protection voltage
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration. This
increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its
breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate
V(BO) (250 V/ms) value by the normalised increase at the surge’s di/dt (Figure 7.) . An estimate of the di/dt
can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise
is exponential, the initial dv/dt is higher, being in the region of 450 V/µs. The instantaneous generator output
resistance is 25 . If the equipment has an additional series resistance of 20 , the total series resistance
becomes 45 . The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope
resistance of the TISP breakdown region.
capacitance
off-state capacitance
The off-state capacitance of a TISP is sensitive to junction temperature, TJ , and the bias voltage, comprising
of the dc voltage, VD , and the ac voltage, Vd . All the capacitance values in this data sheet are measured with
an ac voltage of 100 mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure 17.
When VD >> Vd the capacitance value is independent on the value of Vd . The capacitance is essentially
constant over the range of normal telecommunication frequencies.
NORMALISED CAPACITANCE
vs
RMS AC TEST VOLTAGE
AIXXAA
1.05
1.00
0.95
0.90
0.85
0.80
0.75
Normalised to Vd = 100 mV
DC Bias, VD = 0
0.70
1
10 100
Vd - RMS AC Test Voltage - mV
Figure 17.
1000
PRODUCT INFORMATION
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