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PDF TISP1072F3 Data sheet ( Hoja de datos )
| Número de pieza | TISP1072F3 | |
| Descripción | DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS | |
| Fabricantes | Power Innovations Limited | |
| Logotipo |  |
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Copyright © 1997, Power Innovations Limited, UK
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘1072F3
‘1082F3
VDRM
V
- 58
- 66
V(BO)
V
- 72
- 82
q Planar Passivated Junctions
Low Off-State Current < 10 µA
q Rated for International Surge Wave Shapes
WAVE SHAPE
2/10 µs
8/20 µs
10/160 µs
10/560 µs
0.5/700 µs
10/700 µs
10/1000 µs
STANDARD
FCC Part 68
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
ITSP
A
80
70
60
45
38
50
50
50
35
q Surface Mount and Through-Hole Options
D PACKAGE
(TOP VIEW)
T1
NC 2
NC 3
R4
8G
7G
6G
5 G MDXXAE
NC - No internal connection
P PACKAGE
(TOP VIEW)
T1
8T
G2
7G
G3
R4
6G
5R
MDXXAF
Specified T terminal ratings require connection of pins 1 and 8.
Specified R terminal ratings require connection of pins 4 and 5.
SL PACKAGE
(TOP VIEW)
T1
G2
PACKAGE
Small-outline
Small-outline taped
and reeled
Plastic DIP
Single-in-line
PART # SUFFIX
D
DR
P
SL
R3
device symbol
T
MDXXAG MD1XAA
R
q UL Recognized, E132482
description
These dual asymmetrical transient voltage
suppressors are designed for the overvoltage
protection of ICs used for the SLIC (Subscriber
Line Interface Circuit) function. The IC line driver
section is typically powered with 0 V and a
negative supply. The TISP1xxxF3 limits voltages
that exceed these supply rails and is offered in
two voltage variants to match typical negative
supply voltage values.
High voltages can occur on the line as a result of
exposure to lightning strikes and a.c. power
surges. Negative transients are initially limited by
breakdown clamping until the voltage rises to the
SD1XAA
G
Terminals T, R and G correspond to the
alternative line designators of A, B and C
breakover level, which causes the device to
crowbar. The high crowbar holding current
prevents d.c. latchup as the current subsides.
Positive transients are limited by diode forward
conduction. These protectors are guaranteed to
suppress and withstand the listed international
lightning surges on any terminal pair
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page  
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
R and G, or T and G terminals
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
100
TC1LAF
VD = -50 V
10
BREAKDOWN VOLTAGES
vs
JUNCTION TEMPERATURE
TC1LAL
I(BR) = 1 mA
'1082F3
80.0
V(BO)
1 V(BR)
V(BR)M
70.0 '1072F3
0·1 V(BO)
0·01
0·001
-25
0 25 50 75 100 125
TJ - Junction Temperature - °C
Figure 3.
150
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
TC1LAC
100
60.0
V(BR)
V(BR)M
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
Figure 4.
FORWARD CURRENT
vs
FORWARD VOLTAGE
TC1LAE
100
150°C
-40°C
25°C
10 10
150°C
1
1
25°C
-40°C
2 3 4 5 6 7 8 9 10
VT - On-State Voltage - V
Figure 5.
1
1
2 3 4 5 6 7 8 9 10
VF - Forward Voltage - V
Figure 6.
PRODUCT INFORMATION
5
5 Page 
TISP1072F3, TISP1082F3
DUAL ASYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
SEPTEMBER 1993 - REVISED SEPTEMBER 1997
APPLICATIONS INFORMATION
protection voltage
The protection voltage, (V(BO) ), increases under lightning surge conditions due to thyristor regeneration.
This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its
breakdown region. The V(BO) value under surge conditions can be estimated by multiplying the 50 Hz rate
V(BO) (250 V/ms) value by the normalised increase at the surge’s di/dt (Figure 8.) . An estimate of the di/dt
can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.
As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise
is exponential, the initial dv/dt is higher, being in the region of 450 V/µs. The instantaneous generator output
resistance is 25 Ω. If the equipment has an additional series resistance of 20 Ω, the total series resistance
becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice the
measured di/dt and protection voltage increase will be lower due to inductive effects and the finite slope
resistance of the TISP breakdown region.
capacitance
off-state capacitance
The off-state capacitance of a TISP is sensitive to junction temperature, TJ , and the bias voltage, comprising
of the dc voltage, VD , and the ac voltage, Vd . All the capacitance values in this data sheet are measured
with an ac voltage of 100 mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure
21. When VD >> Vd the capacitance value is independent on the value of Vd . The capacitance is essentially
constant over the range of normal telecommunication frequencies.
NORMALISED CAPACITANCE
vs
RMS AC TEST VOLTAGE
AIXXAA
1.05
1.00
0.95
0.90
0.85
0.80
0.75
Normalised to Vd = 100 mV
DC Bias, VD = 0
0.70
1
10 100
Vd - RMS AC Test Voltage - mV
Figure 21.
1000
PRODUCT INFORMATION
11
11 Page | ||
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| PDF Descargar | [ Datasheet TISP1072F3.PDF ] | |
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