PDF TIP126 Data sheet ( Hoja de datos )

Número de pieza	TIP126
Descripción	DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Fabricantes	Motorola Semiconductors
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No Preview Available ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• Monolithic Construction with Built–In Base–Emitter Shunt Resistors • TO–220AB Compact Package ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating TIP120, TIP121, TIP122, Symbol TIP125 TIP126 TIP127 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage Emitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak VCEO VCB VEB IC 60 60 80 100 80 100 5.0 5.0 8.0 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C Derate above 25_C IB PD 120 65 0.52 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C PD 2.0 0.016 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive Load Energy (1) E 50 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction, Temperature Range TJ, Tstg – 65 to + 150 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic Symbol Max ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case RθJC ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient RθJA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω. 1.92 62.5 Unit Vdc Vdc Vdc Adc mAdc Watts W/_C Watts W/_C mJ _C Unit _C/W _C/W TA TC 4.0 80 NPN TIP120 TIP121* TIP122* TIPPN1P25* TIP126* TIP127* *Motorola Preferred Device DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 – 80 – 100 VOLTS 65 WATTS CASE 221A–06 TO–220AB 3.0 60 2.0 40 1.0 20 TC TA 00 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 ©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data 1 1 page TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 PACKAGE DIMENSIONS Q H Z B 4 1 23 F T –T– SEATING PLANE C S A U K L V G N D R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES DIM MIN MAX A 0.570 0.620 B 0.380 0.405 C 0.160 0.190 D 0.025 0.035 F 0.142 0.147 G 0.095 0.105 H 0.110 0.155 J 0.018 0.025 K 0.500 0.562 L 0.045 0.060 N 0.190 0.210 Q 0.100 0.120 R 0.080 0.110 S 0.045 0.055 T 0.235 0.255 U 0.000 0.050 V 0.045 ––– Z ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 221A–06 TO–220AB ISSUE Y Motorola Bipolar Power Transistor Device Data 5 5 Page

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