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PDF TIP112F Data sheet ( Hoja de datos )
| Número de pieza | TIP112F | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) | |
| Fabricantes | KEC(Korea Electronics) | |
| Logotipo | .gif "KEC(Korea Electronics)"){kind=logo} |
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SEMICONDUCTOR
TECHNICAL DATA
TIP112F
EPITAXIAL PLANAR NPN TRANSISTOR
MONOLITHIC CONSTRUCTION WITH BUILT IN
BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.
FEATURES
High DC Current Gain.
: hFE=1000(Min.), VCE=4V, IC=1A.
Low Collector-Emitter Saturation Voltage.
Complementary to TIP117F.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Base Current
DC
VCBO
VCEO
VEBO
IC
ICP
IB
100
100
5
2
4
50
Collector Power
Ta=25
2
Dissipation
PC
Tc=25
20
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -65 150
UNIT
V
V
V
A
mA
W
A
U
E
LL
M
DD
NN
T
T
123
C
DIM MILLIMETERS
A 10.30 MAX
B 15.30 MAX
C 2.70Ź0.30
S D 0.85 MAX
E Φ3.20Ź0.20
F 3.00Ź0.30
G 12.30 MAX
T
RH
0.75 MAX
J 13.60Ź0.50
K 3.90 MAX
L 1.20
VM
N
1.30
2.54
O 4.50Ź0.20
P 6.80
Q 2.60Ź0.20
HR
S
10Ɓ
25Ş
T 5Ş
U 0.5
V 2.60Ź0.15
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
B
C
R1
= 10kΩ
R2
= 0.6kΩ
E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
ICEO
ICBO
IEBO
DC Current Gain
hFE
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Output Capacitance
VCEO(SUS)
VCE(sat)
VBE(ON)
Cob
TEST CONDITION
VCE=50V, IB=0
VCB=100V, IE=0
VEB=5V, IC=0
VCE=4V, IC=1A
VCE=4V, IC=2A
IC=30mA, IB=0
IC=2A, IB=8mA
VCE=4V, IC=2A
VCB=10V, IE=0, f=0.1MHz
MIN.
-
-
-
1000
500
100
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
MAX.
2
1
2
-
-
-
2.5
2.8
100
UNIT
mA
mA
V
V
V
pF
2002. 6. 25
Revision No : 0
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet TIP112F.PDF ] | |
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