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PDF TIP110 Data sheet ( Hoja de datos )
| Número de pieza | TIP110 | |
| Descripción | DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP110/D
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
• High DC Current Gain —
hFE = 2500 (Typ) @ IC = 1.0 Adc
• Collector–Emitter Sustaining Voltage — @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ Monolithic Construction with Built–in Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΕ TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
Symbol
VCEO
VCB
VEB
IC
TIP110,
TIP115
60
60
TIP111,
TIP116
80
80
5.0
2.0
4.0
TIP112,
TIP117
100
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
IB
PD
50
50
0.4
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
0.016
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUnclamped Inductive Load Energy —
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFigure 13
E
25
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristics
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
– 65 to + 150
Symbol
RθJC
RθJA
Max
2.5
62.5
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
Watts
W/_C
mJ
_C
Unit
_C/W
_C/W
TA TC
NPN
TIP110
TIP111*
TIP112*
PNP
TIP115
TIP116*
TIP117*
*Motorola Preferred Device
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 – 80 – 100 VOLTS
50 WATTS
CASE 221A–06
TO–220AB
3.0 60
2.0 40
1.0 20
TC
TA
00
0 20 40 60 80 100 120
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
140 160
1
1 page  
NPN
TIP110, 111, 112
+ 0.8
*APPLIES FOR IC/IB ≤ hFE/3
0
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
PNP
TIP115, 116, 117
+ 0.8
*APPLIES FOR IC/IB ≤ hFE/3
0
– 0.8 – 0.8 25°C to 150°C
– 1.6
– 2.4 * θVC for VCE(sat)
– 3.2
θVC for VBE
– 4.0
25°C to 150°C
– 55°C to 25°C
25°C to 150°C
– 55°C to 25°C
– 1.6 * θVC for VCE(sat)
– 2.4
– 3.2
– 4.0 θVC for VBE
– 55°C to 25°C
25°C to 150°C
– 55°C to 25°C
– 4.8
0.04 0.06
0.1 0.2
0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
4.0
– 4.8
0.04 0.06
0.1 0.2
0.4 0.6 1.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
2.0
4.0
105
REVERSE
104
FORWARD
105
REVERSE
104
FORWARD
103
VCE = 30 V
102
TJ = 150°C
101
100 100°C
25°C
10–1
– 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
103 VCE = 30 V
102
101 TJ = 150°C
100°C
100
10–1 25°C
– 0.6 – 0.4 – 0.2 0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
INPUT
MJE254
50 Ω
50 Ω
VBB1 = 10 V
+
–
RBB1
2 kΩ
RBB2
100 Ω
VBB2 = 0
VCE MONITOR
100 mH
TUT +
VCC = 20 V
– IC
MONITOR
RS =
0.1 Ω
Note A: Input pulse width is increased until ICM = 0.71 A,
NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.
INPUT
VOLTAGE
0V
–5 V
0.71 A
COLLECTOR
CURRENT
0V
VCER
COLLECTOR
VOLTAGE
20 V
VCE(sat)
tw ≈ 3.5 ms (SEE NOTE A)
100 ms
Figure 13. Inductive Load Switching
Motorola Bipolar Power Transistor Device Data
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TIP110.PDF ] | |
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