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PDF TIC108M Data sheet ( Hoja de datos )
| Número de pieza | TIC108M | |
| Descripción | SILICON CONTROLLED RECTIFIERS | |
| Fabricantes | Power Innovations Limited | |
| Logotipo |  |
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Copyright © 1997, Power Innovations Limited, UK
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
q 5 A Continuous On-State Current
q 20 A Surge-Current
q Glass Passivated Wafer
q 400 V to 800 V Off-State Voltage
q Max IGT of 1 mA
TO-220 PACKAGE
(TOP VIEW)
K1
A2
G3
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
TIC108D
Repetitive peak off-state voltage (see Note 1)
TIC108M
TIC108S
TIC108N
TIC108D
Repetitive peak reverse voltage
TIC108M
TIC108S
TIC108N
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current (see Note 4)
Peak positive gate current (pulse width ≤ 300 µs)
Peak gate power dissipation (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
VDRM
VRRM
IT(RMS)
IT(AV)
ITM
IGM
PGM
PG(AV)
TC
Tstg
TL
400
600
700
800
400
600
700
800
5
3.2
20
0.2
1.3
0.3
-40 to +110
-40 to +125
230
V
V
A
A
A
A
W
W
°C
°C
°C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ.
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
1 page  
TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
TC23AA
10
VAA = 6 V
RL = 100 Ω
tp(g) ≥ 20 µs
1
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
TC23AB
0·9
VAA = 6 V
RL = 100 Ω
0·8
RGK = 1 kΩ
tp(g) ≥ 20 µs
0·7
0·6
0·5
0·1
-60 -40 -20 0 20 40 60 80 100 120
TC - Case Temperature - °C
Figure 7.
GATE FORWARD VOLTAGE
vs
GATE FORWARD CURRENT
100
TC23AC
IA = 0
TC = 25 °C
tp = 300 µs
Duty Cycle ≤ 2 %
0·4
-50
-25 0
25 50 75 100 125
TC - Case Temperature - °C
Figure 8.
HOLDING CURRENT
vs
CASE TEMPERATURE
10
VAA = 6 V
RGK = 1 kΩ
Initiating IT = 20 mA
TC23AD
10
1
0·1 1 10 100 1000
IGF - Gate Forward Current - mA
Figure 9.
1
-50 -25 0 25 50 75 100 125
TC - Case Temperature - °C
Figure 10.
PRODUCT INFORMATION
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TIC108M.PDF ] | |
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