PDF TIC106D Data sheet ( Hoja de datos )

Número de pieza	TIC106D
Descripción	SILICON CONTROLLED RECTIFIERS
Fabricantes	Power Innovations Limited
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No Preview Available ! Copyright © 1997, Power Innovations Limited, UK TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 q 5 A Continuous On-State Current q 30 A Surge-Current q Glass Passivated Wafer q 400 V to 800 V Off-State Voltage q Max IGT of 200 µA TO-220 PACKAGE (TOP VIEW) K1 A2 G3 Pin 2 is in electrical contact with the mounting base. MDC1ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIC106D Repetitive peak off-state voltage (see Note 1) TIC106M TIC106S TIC106N TIC106D Repetitive peak reverse voltage TIC106M TIC106S TIC106N Continuous on-state current at (or below) 80°C case temperature (see Note 2) Average on-state current (180° conduction angle) at (or below) 80°C case temperature (see Note 3) Surge on-state current (see Note 4) Peak positive gate current (pulse width ≤ 300 µs) Peak gate power dissipation (pulse width ≤ 300 µs) Average gate power dissipation (see Note 5) Operating case temperature range Storage temperature range Lead temperature 1.6 mm from case for 10 seconds VDRM VRRM IT(RMS) IT(AV) ITM IGM PGM PG(AV) TC Tstg TL 400 600 700 800 400 600 700 800 5 3.2 30 0.2 1.3 0.3 -40 to +110 -40 to +125 230 V V A A A A W W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly to zero at 110°C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 1 page TIC106 SERIES SILICON CONTROLLED RECTIFIERS APRIL 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS GATE TRIGGER CURRENT vs CASE TEMPERATURE TC20AA VAA = 6 V RL = 100 Ω tp(g) ≥ 20 µs 100 GATE TRIGGER VOLTAGE vs CASE TEMPERATURE TC20AB 1 VAA = 6 V 0·8 RL = 100 Ω RGK = 1 kΩ tp(g) ≥ 20 µs 0·6 0·4 0·2 10 -50 -25 0 25 50 75 100 TC - Case Temperature - °C Figure 7. 125 GATE FORWARD VOLTAGE vs GATE FORWARD CURRENT TC20AC 10 IA = 0 TC = 25 °C tp = 300 µs Duty Cycle ≤ 2 % 0 -50 10 -25 0 25 50 75 100 125 TC - Case Temperature - °C Figure 8. HOLDING CURRENT vs CASE TEMPERATURE TC20AD VAA = 6 V RGK = 1 kΩ Initiating IT = 10 mA 1 0·1 0·1 1 10 100 IGF - Gate Forward Current - mA Figure 9. 1000 1 -50 -25 0 25 50 75 100 125 TC - Case Temperature - °C Figure 10. PRODUCT INFORMATION 5 5 Page

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