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PDF THDT6511DRL Data sheet ( Hoja de datos )
| Número de pieza | THDT6511DRL | |
| Descripción | TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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THDT6511D
Application Specific Discretes
A.S.D.™
TRANSIENT VOLTAGE SUPPRESSOR
FOR SLIC PROTECTION
FEATURES
DUAL ASYMETRICAL TRANSIENT SUPPRESSOR
PEAK PULSE CURRENT : IPP = 40A, 10/100µs
HOLDING CURRENT : 150 mA min.
BREAKDOWN VOLTAGE : 65 V min.
LOW DYNAMIC CHARACTERISTICS
STAND CCITT K20 AND LSSGR
PRELIMINARY DATASHEET
DESCRIPTION
This device has been especially designed to
protect subscriber line cards against overvoltage.
Two diodes clamp positive overloads while
negative surges are suppressed by two protection
thyristors.
A particular attention has beengiven to the internal
wire bonding. The ”4-point” configuration ensures
a reliable protection, eliminating overvoltages
introduced by the parasitic inductances of the
wiring (Ldi/dt), especially for very fast transient
overvoltages.
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
CCITT K20 :
10/700µs
5/310µs
VDE 0433 :
10/700µs
5/310µs
VDE 0878 :
1.2/50µs
1/20µs
I3124 :
0.5/700µs
0.2/310µs
FCC part 68 :
2/10µs
2/10µs
BELLCORE
TR-NWT-001089 :
2/10µs
2/10µs
10/1000µs
10/1000µs
(*) with series resistors or PTC.
1kV
38A
2kV
50A
1.5kV
40A
1kV
38A
2.5kV
125A (*)
2.5kV
125A (*)
1kV
40A (*)
SO8
SCHEMATIC DIAGRAM
TIP 1
GND 2
GND 3
RING 4
8 TIP
7 GND
6 GND
5 RING
February 1998 - Ed: 2
1/6
1 page  
TYPICAL APPLICATION
RING
GENERATOR
THDT6511D
LINE A
LINE B
T
E
S
T
R
E
L
A
Y
PTC
PTC
THBT200S
RING
RELAY
-V
bat
TIP
Integrated
SLIC
THDT6511D RING
Line A
D1
Line B
Tip
P1 - For positive surges versus GND (TIP), diode D1
will conduct.
- For negative surges versus GND (TIP),
protectiondevice P1 will trigger at maximum
voltage equal to VBO.
Ring
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet THDT6511DRL.PDF ] | |
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