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PDF THD200FI Data sheet ( Hoja de datos )
| Número de pieza | THD200FI | |
| Descripción | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de THD200FI (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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® THD200FI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s HIGH VOLTAGE CAPABILITY
s VERY HIGH SWITCHING SPEED
s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR
MONITORS
DESCRIPTION
The THD200FI is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The THD series is designed for use in horizontal
deflection circuits in televisions and monitors.
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V EBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Parameter
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
St orage Temperature
Max. Operating Junction Temperature
December 1999
Value
1500
700
10
10
20
5
10
57
-65 to 150
150
Uni t
V
V
V
A
A
A
A
W
oC
oC
1/7
1 page  
THD200FI
BASE DRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
IB1 has to be provided for the lowest gain hFE at Tj
= 100 oC (line scan phase). On the other hand,
negative base current IB2 must be provided turn
off the power transistor (retrace phase). Most of
the dissipation, especially in the deflection
application, occurs at switch-off so it is essential
to determine the value of IB2 which minimizes
power losses, fall time tf and, consequently, Tj. A
new set of curves have been defined to give total
power losses, ts and tf as a function of IB2 at both
32 KHz and 64 KHz scanning frequencies in
order to choice the optimum negative drive. The
test circuit is illustrated in fig. 1.
Figure 1: Inductive Load Switching Test Circuit.
Inductance L1 serves to control the slope of the
negative base current IB2 in order to recombine
the excess carriers in the collector when base
current is still present, thus avoiding any tailing
phenomenon in the collector current.
The values of L and C are calculated from the
following equations:
1
2
L
(IC)2
=
1
2
C
(VCEfly)2
ω
=
2
πf
=
1
√LC
Where IC = operating collector current, VCEfly=
flyback voltage, f= frequency of oscillation during
retrace.
Figure 2: Switching Waveforms in a Deflection Circuit.
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet THD200FI.PDF ] | |
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