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PDF TLP250 Data sheet ( Hoja de datos )
| Número de pieza | TLP250 | |
| Descripción | TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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1. TLP250  Hay una vista previa y un enlace de descarga de TLP250 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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TOSHIBA Photocoupler GaAlAs Ired & Photo−IC
TLP250
TLP250
Transistor Inverter
Inverter For Air Conditionor
IGBT Gate Drive
Power MOS FET Gate Drive
The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a
integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.
• Input threshold current: IF=5mA(max.)
• Supply current (ICC): 11mA(max.)
• Supply voltage (VCC): 10−35V
• Output current (IO): ±1.5A (max.)
• Switching time (tpLH/tpHL): 1.5µs(max.)
• Isolation voltage: 2500Vrms(min.)
• UL recognized: UL1577, file No.E67349
• Option (D4) type
VDE approved: DIN VDE0884/06.92,certificate No.76823
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 4000VPK
(Note) When a VDE0884 approved type is needed,
please designate the "option (D4)"
• Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Schmatic
2+
VF
3-
IF
ICC
(Tr 1)
IO
(Tr 2)
VCC
8
VO
7
VO
6
A 0.1µF bypass capcitor must be
connected between pin 8 and 5 (See Note 5).
GND
5
Truth Table
Tr1 Tr2
Input
On
On
Off
LED Off Off On
1
Unit in mm
TOSHIBA
Weight: 0.54 g
11−10C4
Pin Configuration (top view)
18
27
36
45
1 : N.C.
2 : Anode
3 : Cathode
4 : N.C.
5 : GND
6 : VO (Output)
7 : VO
8 : VCC
2004-06-25
1 page  
Test Circuit 1 :
1
8
Test Circuit 2 : IOPL
1
45
4
Test Circuit 3 : IOPH
1
IF
4
8
0.1µF
A
IOPH
VCC
V8-6
Test Circuit 4 : VOH
1
IF
4
Test Circuit 5 : VOL
1
VF
4
8
0.1µF
RL
V VOL
VCC1
VEE1
TLP250
8
0.1µF
A
IOPL
V6-5
VCC
8
0.1µF
RL
V VOH
VCC1
VEE1
5 2004-06-25
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TLP250.PDF ] | |
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