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PDF TS271CB Data sheet ( Hoja de datos )
| Número de pieza | TS271CB | |
| Descripción | CMOS PROGRAMMABLE LOW POWER SINGLE OPERATIONAL AMPLIFIER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TS271CB (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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TS271C,I,M
CMOS PROGRAMMABLE
LOW POWER SINGLE OPERATIONAL AMPLIFIER
s OFFSET NULL CAPABILITY (by external
compensation)
s DYNAMIC CHARACTERISTICS
ADJUSTABLE ISET
s CONSUMPTION CURRENT AND DYNAMIC
PARAMETERS ARE STABLE REGARDING
THE VOLTAGE POWER SUPPLY
VARIATIONS
s OUTPUT VOLTAGE CAN SWING TO
GROUND
s VERY LARGE ISET RANGE
s STABLE AND LOW OFFSET VOLTAGE
s THREE INPUT OFFSET VOLTAGE
SELECTIONS
DESCRIPTION
The TS271 is a low cost, low power single oper-
tional amplifier designed to operate with single or
dual supplies. This operational amplifier uses the
ST silicon gate CMOS process giving it an excel-
lent consumption-speed ratio. This amplifier is ide-
ally suited for low consumption applications.
The power supply is externally programmable with
a resistor connected between pins 8 and 4. It al-
lows to choose the best consumption-speed ratio
and supply current can be minimized according to
the required speed. This device is specified for the
following ISET current values : 1.5µA, 25µA,
130µA.
This CMOS amplifier offers very high input imped-
ance and extremely low input currents. The major
advantage versus JFET devices is the very low in-
put currents drift with temperature (see figure 3).
ORDER CODE
Part Number Temperature Range
TS271C/AC/BC
0°C, +70°C
TS271I/AI/BI
-40°C, +125°C
TS271M/AM/BM
-55°C, +125°C
Example : TS271ACN
Package
ND
••
••
••
N = Dual in Line Package (DIP)
D = Small Outline Package (SO) - also available in Tape & Reel (DT)
N
DIP8
(Plastic Package)
D
SO8
(Plastic Micropackage)
PIN CONNECTIONS (top view)
1
2-
3+
4
8
7
6
5
1 - Offset Null 1
2 - Inverting Input 1
3 - Non-inverting Input 1
4
-
V
-
CC
5 - Offset Null 2
6 - Output
7 - VCC+
8 - I Set
November 2001
1/15
1 page  
TS271C,I,M
ELECTRICAL CHARACTERISTICS for ISET = 1.5µA
VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified)
Symbol
Parameter
TS271C/AC/BC
Min. Typ. Max.
TS271I/AI/BI
TS271M/AM/BM
Min. Typ. Max.
Unit
Vio
DVio
Iio
Input Offset Voltage
VO = 1.4V, Vic = 0V
Tmin ≤ Tamb ≤ Tmax
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
Input Offset Voltage Drift
Input Offset Current note 1)
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
1.1 10
0.9 5
0.25 2
12
6.5
3
2
1
100
1.1
0.9
0.25
10
5
2
12
6.5
3.5
2
mV
µV/°C
1
200
pA
Iib
VOH
VOL
Avd
GBP
CMR
SVR
ICC
Io
Isink
SR
φm
KOV
en
Input Bias Current - see note 1
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
High Level Output Voltage
Vid = 100mV, RL = 1MΩ
Tmin ≤ Tamb ≤ Tmax
Low Level Output Voltage
Vid = -100mV
Large Signal Voltage Gain
ViC = 5V, RL = 1MΩ, Vo = 1V to 6V
Tmin ≤ Tamb ≤ Tmax
Gain Bandwidth Product
Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 100kHz
Common Mode Rejection Ratio
ViC = 1V to 7.4V, Vo = 1.4V
Supply Voltage Rejection Ratio
VCC+ = 5V to 10V, Vo = 1.4V
Supply Current (per amplifier)
Av = 1, no load, Vo = 5V
Tmin ≤ Tamb ≤ Tmax
Output Short Circuit Current
Vo = 0V, Vid = 100mV
Output Sink Current
Vo = VCC, Vid = -100mV
Slew Rate at Unity Gain
RL = 1MΩ, CL = 100pF, Vi = 3 to 7V
Phase Margin at Unity Gain
Av = 40dB, RL = 1MΩ CL = 10pF
CL = 100pF
Overshoot Factor
Av = 40dB, RL = 1MΩ CL = 10pF
CL = 100pF
Equivalent Input Noise Voltage
f = 1kHz, Rs = 100Ω
1
150
1
300
pA
8.8 9
8.7
8.8 9
8.6
50
50
V
mV
30 100
20
0.1
60 80
60 80
30 100
20
0.1
60 80
60 80
V/mV
MHz
dB
dB
10 15
17
60
45
0.04
35
10
40
70
30
10 15
18
60
45
0.04
µA
mA
mA
V/µs
35 Degrees
10
40 %
70
--n----V-----
30 Hz
1. Maximum values including unavoidable inaccuracies of the industrial test.
5/15
5 Page 
TS271C,I,M
ELECTRICAL CHARACTERISTICS for ISET = 130µA
VCC+ = +10V, VCC-= 0V, Tamb = +25°C (unless otherwise specified)
Symbol
Parameter
TS271C/AC/BC
TS271I/AI/BI
TS271M/AM/BM
Min. Typ. Max. Min. Typ. Max.
Unit
Vio
DVio
Iio
Iib
VOH
VOL
Avd
GBP
CMR
SVR
ICC
Io
Isink
SR
φm
KOV
en
Input Offset Voltage
VO = 1.4V, Vic = 0V
Tmin ≤ Tamb ≤ Tmax
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
TS271C/I/M
TS271AC/AI/AM
TS271B/C/I/M
Input Offset Voltage Drift
Input Offset Current note 1)
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
Input Bias Current - see note 1
Vic = 5V, VO = 5V
Tmin ≤ Tamb ≤ Tmax
High Level Output Voltage
Vid = 100mV, RL = 10kΩ
Tmin ≤ Tamb ≤ Tmax
Low Level Output Voltage
Vid = -100mV
Large Signal Voltage Gain
ViC = 5V, RL = 10kΩ, Vo = 1V to 6V
Tmin ≤ Tamb ≤ Tmax
Gain Bandwidth Product
Av = 40dB, RL = 10kΩ, CL = 100pF, fin = 100kHz
Common Mode Rejection Ratio
ViC = 1V to 7.4V, Vo = 1.4V
Supply Voltage Rejection Ratio
VCC+ = 5V to 10V, Vo = 1.4V
Supply Current (per amplifier)
Av = 1, no load, Vo = 5V
Tmin ≤ Tamb ≤ Tmax
Output Short Circuit Current
Vo = 0V, Vid = 100mV
Output Sink Current
Vo = VCC, Vid = -100mV
Slew Rate at Unity Gain
RL = 10kΩ, CL = 100pF, Vi = 3 to 7V
Phase Margin at Unity Gain
Av = 40dB, RL = 10kΩ CL = 10pF
CL = 100pF
Overshoot Factor
Av = 40dB, RL = 10kΩ CL = 10pF
CL = 100pF
Equivalent Input Noise Voltage
f = 1kHz, Rs = 100Ω
1.1 10
0.9 5
0.25 2
12
6.5
3
2
1
100
1.1
0.9
0.25
10
5
2
12
6.5
3.5
2
mV
µV/°C
1
200
pA
1
150
1
300
pA
8.2 8.4
8.1
8.2 8.4
8
50 50
V
mV
10 15
7
2.3
60 80
60 70
10 15
6
2.3
60 80
60 70
V/mV
MHz
dB
dB
800 1300
1400
60
45
4.5
800 1300
1500
60
45
4.5
µA
mA
mA
V/µs
65 65 Degrees
30 30
30 30 %
50 50
---n---V-----
30 30 Hz
1. Maximum values including unavoidable inaccuracies of the industrial test.
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet TS271CB.PDF ] | |
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