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PDF U430 Data sheet ( Hoja de datos )
| Número de pieza | U430 | |
| Descripción | Matched N-Channel Pairs | |
| Fabricantes | Vishay Siliconix | |
| Logotipo |  |
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Matched N-Channel Pairs
U430/431
Vishay Siliconix
PRODUCT SUMMARY
Part Number
U430
U431
VGS(off) (V)
–1 to –4
–2 to –6
V(BR)GSS Min (V)
–25
–25
gfs Min (mS)
10
10
IG Typ (pA)
–15
–15
jVGS1 – VGS2j Typ (mV)
25
25
FEATURES
D Two-Chip Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 15 pA
D Low Noise
D High CMRR: 75 dB
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
APPLICATIONS
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
DESCRIPTION
The U430/431 are matched JFET pairs assembled in a TO-78
package. These devices offer good power gain even at
frequencies beyond 250 MHz.
The TO-78 package is available with full military processing
(see Military Information).
For similar products, see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-78
S1
1
G1 2
S2
7
6 G2
35
D1 4 D2
Case
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70249
S-04031—Rev. E, 04-Jun-01
Power Dissipation :
Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C
www.vishay.com
8-1
1 page  
U430/431
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current
100
TA = 25_C
80
Circuit Voltage Gain vs. Drain Current
100
AV
+1
gfs RL
) RLgos
80 Assume VDD = 15 V, VDS = 5 V
VGS(off) = –1.5 V
60
RL
+
10 V
ID
60
40
–3 V
20
40 VGS(off) = –1.5 V
20 –3 V
0
1 10
ID – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
15
f = 1 MHz
100
12
0
0.1
1
ID – Drain Current (mA)
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
10
f = 1 MHz
10
8
9 VDS = 0 V
6
3 5V
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Input Admittance vs. Frequency
100
VDG = 10 V
ID = 10 mA
Common–Gate
gig
10
big
1
6
VDS = 0 V
4
2
5V
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Forward Admittance vs. Frequency
100
VDG = 10 V
ID = 10 mA
Common–Gate
–gfg
10
bfg
1
0.1
100
200 500
f – Frequency (MHz)
Document Number: 70249
S-04031—Rev. E, 04-Jun-01
1000
0.1
100
200 500
f – Frequency (MHz)
1000
www.vishay.com
8-5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet U430.PDF ] | |
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