DataSheet.es    


PDF US1GB Data sheet ( Hoja de datos )

Número de pieza US1GB
Descripción SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER
Fabricantes Shanghai Sunrise Electronics 
Logotipo Shanghai Sunrise Electronics Logotipo



Hay una vista previa y un enlace de descarga de US1GB (archivo pdf) en la parte inferior de esta página.


Total 1 Páginas

No Preview Available ! US1GB Hoja de datos, Descripción, Manual

SHANGHAI SUNRISE ELECTRONICS CO., LTD.
US1AB THRU US1MB
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
260oC/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
SMB/DO-214AA
B
AC
F
G
D
H
ABCD
MAX. .155(3.94) .180(4.57) .083(2.11) .012(0.305)
MIN. .130(3.30) .160(4.06) .077(1.96) .006(0.152)
E FGH
MAX. .220(5.59) .096(2.44) .008(0.203) .060(1.52)
MIN. .205(5.21) .084(2.13) .004(0.102) .030(0.76)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
US1
AB
US1
BB
US1
DB
US1
GB
US1
JB
US1
KB
US1
MB
UNITS
Maximum Repetitive Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(TL=100oC)
VRMS
VDC
IF(AV)
35 70 140 280 420 560 700
50 100 200 400 600 800 1000
1.0
V
V
A
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IFSM
30
A
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=100oC
Maximum Reverse Recovery Time (Note 1)
VF
IR
trr
1.0
50
1.4
5.0
200
1.7
75
V
µA
µA
nS
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
Storage and Operation Junction Temperature
Note:
CJ
Rθ(ja)
TSTG,TJ
20
32
-50 to +150
10
pF
oC/W
oC
1.Reverse recovery condition IF=0.5A, IR=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0Vdc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
http://www.sse-diode.com

1 page





PáginasTotal 1 Páginas
PDF Descargar[ Datasheet US1GB.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
US1G1.0 AMP SURFACE MOUNT FAST RECOVERY RECTIFIERSGW
GW
US1GSMA ultra fast low-loss controlled avalanche rectifiersNXP Semiconductors
NXP Semiconductors
US1GUltrafast Switching Surface Mount Si-RectifiersDiotec Semiconductor
Diotec Semiconductor
US1G1 AMP SURFACE MOUNT GLASS FAST RECOVERY RECTIFIERFuji Electric
Fuji Electric

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar