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PDF UPG2009TB Data sheet ( Hoja de datos )
| Número de pieza | UPG2009TB | |
| Descripción | L-BAND HIGH POWER SPDT SWITCH | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital
cellular or cordless telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion
loss and high isolation by 2.8 V control voltage.
FEATURES
• Low insertion loss : LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
LINS = 0.30 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High isolation
: ISL = 28 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 2.0 GHz
• High power
: Pin (0.1dB) = 34 dBm TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz
• 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
• L-band digital cellular or cordless telephone
• BuletoothTM, W-LAN and WLL applications
ORDERING INFORMATION
Part Number
µPG2009TB-E3
Package
6-pin super minimold
Marking
G2U
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2009TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10191EJ02V0DS (2nd edition)
Date Published July 2004 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices, Ltd. 2002, 2004
1 page  
µPG2009TB
TYPICAL CHARACTERISTICS (TA = +25°C, Vcont1/2 = 2.8 V/0 V, Pin = 0 dBm, OUT2 side is 50 Ω
termination, unless otherwise specified)
INPUT RETURN LOSS vs. FREQUENCY
CH1 S11 log MAG
0
10 dB/ REF 0 dB
1: –25.43 dB
1.0 GHz
2: –30.339 dB
1.5 GHz
3: –30.025 dB
2.0 GHz
4: –23.812 dB
2.5 GHz
5: –17.85 dB
3.0 GHz
CH1 S21
0
ISOLATION vs. FEQUENCY
log MAG
10 dB/ REF 0 dB
1: –28.787 dB
1.0 GHz
2: –28.871 dB
1.5 GHz
3: –27.75 dB
2.0 GHz
4: –24.902 dB
2.5 GHz
5: –21.582 dB
3.0 GHz
–20 1
5
4
–40 2 3
START 0.500 000 000 GHz
STOP 3.000 000 000 GHz
Frequency f (GHz)
–20 1
234 5
–40
START 0.500 000 000 GHz
STOP 3.000 000 000 GHz
Frequency f (GHz)
INSERTION LOSS vs. FREQUENCY
CH1 S21 log MAG
01
1 dB/ REF 0 dB
1: –0.620 dB
1.0 GHz
2: –0.744 dB
1.5 GHz
3: –0.881 dB
2.0 GHz
4: –1.057 dB
2.5 GHz
5: –1.302 dB
3.0 GHz
–2.0 2 3 4 5
–4.0
START 0.500 000 000 GHz
STOP 3.000 000 000 GHz
Frequency f (GHz)
OUTPUT RETERN LOSS vs. FREQUENCY
CH1 S22 log MAG
0
10 dB/ REF 0 dB
1: –25.992 dB
1.0 GHz
2: –31.882 dB
1.5 GHz
3: –32.46 dB
2.0 GHz
4: –25.087 dB
2.5 GHz
5: –18.145 dB
3.0 GHz
–20 1
5
4
–40 2 3
START 0.500 000 000 GHz
STOP 3.000 000 000 GHz
Frequency f (GHz)
Caution These characteristics values include the losses of the NEC evaluation board.
Remark The graphs indicate nominal characteristics.
Data Sheet PG10191EJ02V0DS
5
5 Page 
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet UPG2009TB.PDF ] | |
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