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PDF VG26V17400EJ-6 Data sheet ( Hoja de datos )

Número de pieza VG26V17400EJ-6
Descripción 4/194/304 x 4 - Bit CMOS Dynamic RAM
Fabricantes Vanguard International Semiconductor 
Logotipo Vanguard International Semiconductor Logotipo



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No Preview Available ! VG26V17400EJ-6 Hoja de datos, Descripción, Manual

VIS
Description
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated
with an advanced submicron CMOS technology and designed to operate from a single 5V only
or 3.3V only power supply. Low voltage operation is more suitable to be used on battery
backup, portable electronic application. A new refresh feature called “ self-refresh “ is supported
and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin
plastic SOJ or TSOP (II).
Features
• Single 5V (±10 %) or 3.3V (±10 %) only power supply
• High speed tRAC access time : 50/60 ns
• Low power dissipation
- Active mode : 5V version 605/550 mW (Max.)
3.3V version 396/360 mW (Max.)
- Standby mode : 5V version 1.375 mW (Max.)
3.3V version 0.54 mW (Max.)
• Fast Page Mode access
• I/O level : TTL compatible (Vcc = 5V)
LVTTL compatible (Vcc = 3.3V)
• 2048 refresh cycles in 32 ms (Std) or 128ms (S - version)
• 4 refresh mode :
- RAS only refresh
- CAS-before-RAS refresh
- Hidden refresh
- Self - refresh (S - version)
Document : 1G5-0142
Rev.1
Page 1

1 page




VG26V17400EJ-6 pdf
VIS
Absolute Maximum Rating
Parameter
Voltage on any pin relative to Vss
Supply voltage relative to Vss
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
5V
3.3V
5V
3.3V
Symbol
VT
Vcc
IOUT
PD
TOPT
TSTG
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Value
-1.0 to + 7.0
-0.5 to + 4.6
-1.0 to + 7.0
-0.5 to + 4.6
50
1.0
0 to + 70
-55 to + 125
Unit
V
V
mA
W
°C
°C
Recommended DC Operating Conditions
Parameter/Condition
Symbol
Supply Voltage
Input High Voltage, all inputs
Input Low Voltage, all inputs
Vcc
VIH
VIL
5 Volt Version
Min Typ
Max
4.5 5.0
5.5
2.4 - VCC + 1.0
-1.0 -
0.8
3.3 Volt Version
Min Typ
Max
3.0 3.3
3.6
2.0 - VCC + 0.3
-0.3 -
0.8
Unit
V
V
V
Capacitance
Ta = 25°C, VCC = 5V±10% or 3.3V±10 %, f = 1MHz
Parameter
Symbol
Typ Max
Input capacitance (Address)
Cl1 - 5
Input capacitance
(RAS, CAS, OE, WE)
Cl2 - 7
Output capacitance
(Data - in, Data - out)
CI/O
-7
Note : 1. Capacitance measured with effective capacitance measuring method.
2. CAS = VIH to disable Dout.
Unit Note
pF 1
pF 1
pF 1,2
Document : 1G5-0142
Rev.1
Page 5

5 Page





VG26V17400EJ-6 arduino
VIS
Read Cycle
Parameter
Access time from RAS
Access time from CAS
Access time from column address
Access time from OE
Read command setup time
Read command hold time to CAS
Read command hold time to RAS
Output buffer turn-off time
Output buffer turn-off time from OE
Write Cycle
Parameter
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
Read - Modigy - Write Cycle
Parameter
Read - modify - write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE hold time from WE
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Symbol
tRAC
tCAC
tAA
tOEA
tRCS
tRCH
tRRH
tOFF
tOEZ
VG26 (V) (S) 17400E
-5 -6
Min Max Min Max
Unit
- 50
- 60 ns
- 13
- 15 ns
- 25
- 30 ns
- 13
- 15 ns
0 - 0 - ns
0 - 0 - ns
0 - 0 - ns
0 13
0 13
0 15 ns
0 15 ns
Notes
12
13,14
14,15
7
10,16
16
17
17
Symbol
tWCS
tWCH
tWP
tRWL
tCWL
tDS
tDH
VG26 (V) (S) 17400E
-5 -6
Min Max Min Max
Unit
0 - 0 - ns
8 - 10 - ns
8 - 10 - ns
13 - 15 - ns
8 - 10 - ns
0 - 0 - ns
8 - 10 - ns
Notes
7,18
19
19
Symbol
tRWC
tRWD
tCWD
tAWD
tOEH
VG26 (V) (S) 17400E
-5 -6
Min Max Min Max
Unit
125 - 150 - ns
65 - 80 - ns
30 - 35 - ns
40 - 50 - ns
8 - 10 - ns
Notes
18
18
18
Document : 1G5-0142
Rev.1
Page 11

11 Page







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