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PDF V62C2164096 Data sheet ( Hoja de datos )
| Número de pieza | V62C2164096 | |
| Descripción | 256K x 16/ 0.17 um CMOS STATIC RAM | |
| Fabricantes | Mosel Vitelic Corp | |
| Logotipo |  |
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MOSEL VITELIC V62C2164096
256K x 16, 0.17 µm CMOS STATIC RAM
PRELIMINARY
Features
s High-speed: 70, 85 ns
s Ultra low CMOS standby current of 4µA (max.)
s Fully static operation
s All inputs and outputs directly TTL compatible
s Three state outputs
s Ultra low data retention current (VCC = 1.2V)
s Operating voltage: 2.3V – 3.0V
s Packages
– 44-pin TSOP (Standard)
– 48-Ball CSP BGA (8mm x 10mm)
Description
The V62C2164096 is a 4,194,304-bit static
random-access memory organized as 262,144
words by 16 bits. Inputs and three-state outputs are
TTL compatible and allow for direct interfacing with
common system bus structures.
A0
A6
A7
A8
A9
I/O1
I/O16
UBE
LBE
OE
WE
CE1
CE2
Functional Block Diagram
Row
Decoder
1024 x 4096
Memory Array
Input
Data
Circuit
Control
Circuit
Column I/O
Column Decoder
A10 A17
VCC
GND
Device Usage Chart
Operating
Temperature
Range
0°C to 70°C
–40°C to +85°C
Package Outline
TB
••
••
Access Time (ns)
70 85
••
••
Power
L LL
••
•
Temperature
Mark
Blank
I
V62C2164096 Rev. 1.0 November 2001
1
1 page  
MOSEL VITELIC
V62C2164096
Data Retention Characteristics
Symbol
VDR
ICCDR
Parameter
VCC for Data Retention
CE1 ≥ VCC – 0.2V, CE2 < 0.2V, VIN ≥ VCC – 0.2V,
or VIN ≤ 0.2V
Data Retention Current
CE1 ≥ VDR – 0.2V, CE2 < 0.2V, VIN ≥ VCC – 0.2V,
or VIN ≤ 0.2V, VDR = 1.2V
Com’l
Ind.
tCDR
Chip Deselect to Data Retention Time
tR Operation Recovery Time (see Retention Waveform)
NOTES:
1. tRC = Read Cycle Time
2. TA = +25°C.
Power
L
LL
L
LL
Min.
1.2
—
—
—
—
0
tRC(1)
Typ.(2)
—
1
0.5
—
—
—
—
Max.
3.0
3
2
5
4
—
—
Low VCC Data Retention Waveform (CE Controlled)
Data Retention Mode
VCC
2.3V
VDR ≥ 1.2V
2.3V
tCDR
tR
CE1
2.0V
CE1 ≥ VCC – 0.2V
2.0V
Units
V
µA
ns
ns
V62C2164096 Rev. 1.0 November 2001
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet V62C2164096.PDF ] | |
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