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PDF VR4J Data sheet ( Hoja de datos )

Número de pieza VR4J
Descripción TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! VR4J Hoja de datos, Descripción, Manual

TOSHIBA Fast Recovery Diode Silicon Diffused Type
TVR4J,TVR4N
TVR4J,TVR4N
High Speed Rectifier Applications (fast recovery)
Unit: mm
· Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V
· Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C)
· Reverse Recovery Time: trr = 20 µs
· Plastic Mold Type.
Maximum Ratings (Ta = 25°C)
Characteristics
Repetitive peak
reverse voltage
TVR4J
TVR4N
Average forward current (Ta = 55°C )
Peak one cycle surge forward current
(non repetitive)
Junction temperature
Storage temperature range
Symbol
VRRM
IF (AV)
IFSM
Tj
Tstg
Rating
600
1000
1.2
100 (50 Hz)
-40 to 150
-40 to 150
Unit
V
A
A
°C
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
3-4B1A
Weight: 0.47 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ.
Peak forward voltage
Repetitive peak reverse current
Reverse recovery time
Thermal resistance (junction to ambient)
VFM
IRRM
trr
Rth (j-a)
IFM = 5 A
VRRM = Rated
IF = 20 mA, IR = 1 mA
DC
¾¾
¾¾
¾¾
¾¾
Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part.
Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire.
Max Unit
1.2 V
10 mA
20 ms
80 °C/W
Marking
Type Code Lot No.
Cathode Mark
Color: Silver
Month (starting from alphabet A)
Year (last number of the christian era)
Code
VR4J
VR4N
Type
TVR4J
TVR4N
1 2002-09-18

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