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PDF VNQ660 Data sheet ( Hoja de datos )

Número de pieza VNQ660
Descripción QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
Fabricantes STMicroelectronics　
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No Preview Available ! VNQ660 Hoja de datos, Descripción, Manual

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® VNQ660SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ660SP
RDS(on)
50mΩ (*)
IOUT
6A
VCC
36 V
(*) Per each channel
s OUTPUT CURRENT PER CHANNEL: 6A
s CMOS COMPATIBLE INPUTS
s OPEN LOAD DETECTION (OFF STATE)
s UNDERVOLTAGE & OVERVOLTAGE
nSHUT- DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
nLOSS OF GROUND & LOSS OF VCC
s REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ660SP is a monolithic device made by
using| STMicroelectronics VIPower M0-3
10
1
PowerSO-10™
ORDER CODES
PACKAGE
TUBE
T&R
PowerSO-10™ VNQ660SP VNQ660SP13TR
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
ABSOLUTE MAXIMUM RATING
Symbol
VCC
-VCC
IOUT
IR
IIN
ISTAT
IGND
VESD
Ptot
Tj
Tstg
EC
Parameter
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), per each channel
Reverse output current (continuous), per each channel
Input current
Status current
Ground current at TC<25°C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- VCC
Power dissipation at TC=25°C
Junction operating temperature
Storage temperature
Non repetitive clamping energy at TC=25°C
(**) See application schematic at page 8
Value
41
-0.3
Internally limited
-15
+/- 10
+/- 10
-200
4000
4000
5000
5000
113.6
-40 to 150
-65 to 150
150
Unit
V
V
A
A
mA
mA
mA
V
V
V
V
W
°C
°C
mJ
July 2003
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1 page




VNQ660 pdf
VNQ660SP
ELECTRICAL TRANSIENT REQUIREMENTS
ISO T/R 7637/1
Test Pulse
I
II
1
-25 V
-50 V
2
+25 V
+50 V
3a
-25 V
-50 V
3b
+25 V
+50 V
4 -4 V -5 V
TEST LEVELS
III IV
-75 V
+75 V
-100 V
+75 V
-6 V
-100 V
+100 V
-150 V
+100 V
-7 V
Delays and
Impedance
2 ms 10 Ω
0.2 ms 10 Ω
0.1 µs 50 Ω
0.1 µs 50 Ω
100 ms, 0.01 Ω
ISO T/R
7637/1
Test Pulse
1
2
3a
3b
4
5
I
C
C
C
C
C
C
Test Levels Result
II III
CC
CC
CC
CC
CC
EE
IV
C
C
C
C
C
E
Class
C
E
Contents
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device is not performed as designed after exposure and cannot be
returned to proper operation without replacing the device.
SWITCHING CHARACTERISTICS
VLOAD
80%
dVOUT/dt(on)
VIN
td(on)
tr
90%
10%
td(off)
dVOUT/dt(off)
t
t
5/16
1

5 Page





VNQ660 arduino
Overvoltage Shutdown
Vov (V)
54
52
50
48
46
44
42
40
38
36
34
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
Turn-on Voltage Slope
dVout/dt(on) (V/ms)
500
450
400 Vcc=13V
Rl=13Ohm
350
300
250
200
150
100
50
0
-50 -25 0 25
50 75
Tc (ºC)
100 125 150 175
On State Resistance Vs Tcase
RDS(on) (mOhm)
100
90
Iout=1A
80
Vcc=9V; 13V; 18V
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
1
VNQ660SP
ILIM Vs Tcase
Ilim (A)
20
17.5
15
12.5
10
7.5
5
2.5
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
Turn-off Voltage Slope
dVout/dt(off) (V/ms)
700
600
Vcc=13V
Rl=13Ohm
500
400
300
200
100
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
On State Resistance Vs VCC
RDS(on) (mOhm)
100
90
Iout=1A
80
Tc=150ºC
70
60
50
Tc=25ºC
40
30 Tc= - 40ºC
20
10
0
8 9 10 11 12 13 14 15 16 17 18 19 20
Vcc (V)
11/16

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