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PDF VNN3NV04 Data sheet ( Hoja de datos )

Número de pieza VNN3NV04
Descripción OMNIFET II: FULLY AUTOPROTECTED POWER MOSFET
Fabricantes STMicroelectronics 
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No Preview Available ! VNN3NV04 Hoja de datos, Descripción, Manual

VNN3NV04 / VNS3NV04
® / VND3NV04 / VND3NV04-1
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VNN3NV04
VNS3NV04
VND3NV04
VND3NV04-1
RDS(on)
120 m
Ilim
3.5 A
Vclamp
40 V
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n ESD PROTECTION
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNN3NV04, VNS3NV04, VND3NV04
VND3NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
BLOCK DIAGRAM
2
3
2
1
SOT-223
SO-8
3
1
3
2
1
TO252 (DPAK)
TO251 (IPAK)
ORDER CODES:
SOT-223
SO-8
TO-252 (DPAK)
TO-251 (IPAK)
VNN3NV04
VNS3NV04
VND3NV04
VND3NV04-1
intended for replacement of standard Power
MOSFETS from DC up to 50KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Overvoltage
Clamp
DRAIN
2
INPUT
1
Gate
Control
February 2003
Over
Temperature
Linear
Current
Limiter
3
SOURCE
FC01000
1/21

1 page




VNN3NV04 pdf
VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1
PROTECTION FEATURES
During normal operation, the INPUT pin is
electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power
MOSFET and can be used as a switch from DC up
to 50KHz. The only difference from the user’s
standpoint is that a small DC current IISS (typ.
100µA) flows into the INPUT pin in order to supply
the internal circuitry.
The device integrates:
- OVERVOLTAGE CLAMP PROTECTION:
internally set at 45V, along with the rugged
avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and
energy handling capability. This feature is mainly
important when driving inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT:
limits the drain current ID to Ilim whatever the
INPUT pin voltages. When the current limiter is
active, the device operates in the linear region, so
power dissipation may exceed the capability of the
heatsink. Both case and junction temperatures
increase, and if this phase lasts long enough,
junction temperature may reach the
overtemperature threshold Tjsh.
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION:
these are based on sensing the chip temperature
and are not dependent on the input voltage. The
location of the sensing element on the chip in the
power stage area ensures fast, accurate detection
of the junction temperature. Overtemperature
cutout occurs in the range 150 to 190 °C, a typical
value being 170 °C. The device is automatically
restarted when the chip temperature falls of about
15°C below shut-down temperature.
- STATUS FEEDBACK:
in the case of an overtemperature fault condition
(Tj > Tjsh), the device tries to sink a diagnostic
current Igf through the INPUT pin in order to
indicate fault condition. If driven from a low
impedance source, this current may be used in
order to warn the control circuit of a device
shutdown. If the drive impedance is high enough
so that the INPUT pin driver is not able to supply
the current Igf, the INPUT pin will fall to 0V. This
will not however affect the device operation:
no requirement is put on the current capability
of the INPUT pin driver except to be able to
supply the normal operation drive current IISS.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit.
5/21

5 Page





VNN3NV04 arduino
VNN3NV04 / VNS3NV04 / VND3NV04 / VND3NV04-1
Turn Off Drain-Source Voltage Slope
dv/dt(V/usec)
300
275
250 Vin=3.5V
Vdd=15V
225 Id=1.5A
200
175
150
125
100
75
50
25
0
0
500
1000
1500
2000
2500
250
750
1250
1750
2250
Rg(ohm)
Switching Time Resistive Load
t(usec)
4
3.5
Vdd=15V
3 Id=1.5A
Vin=5V
2.5
td(off)
tr
2
tf
1.5
1
0.5 td(on)
0
0
500
1000
1500
2000
2500
250
750
1250
1750
2250
Rg(ohm)
Output Characteristics
Id (A)
5
4.5
4
Vin=5V
Vin=4V
3.5 Vin=3V
3
2.5
2
1.5
1
0.5
0
0 1 2 3 4 5 6 7 8 9 10
Vds (V)
Capacitance Variations
C(pF)
350
300
f=1MHz
Vin=0V
250
200
150
100
50
0
5 10 15 20 25 30 35
Vds(V)
Switching Time Resistive Load
t(nsec)
900
800
tr
700
600
Vdd=15V
Id=1.5A
Rg=220ohm
500
400
td(off)
300
200 tf
100 td(on)
0
3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Vin(V)
Normalized On Resistance Vs. Temperature
Rds(on) (mOhm)
4
3.5
Vin=5V
Id=1.5A
3
2.5
2
1.5
1
0.5
-50 -25 0 25 50 75 100 125 150 175
Tc )ºC)
11/21

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