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PDF VND810MSP13TR Data sheet ( Hoja de datos )
| Número de pieza | VND810MSP13TR | |
| Descripción | DOUBLE CHANNEL HIGH SIDE DRIVER | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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® VND810MSP
DOUBLE CHANNEL HIGH SIDE DRIVER
TYPE
RDS(on)
VND810MSP 150 mΩ (*)
(*) Per each channel
IOUT
0.6 A (*)
VCC
36 V
s CMOS COMPATIBLE INPUTS
s OPEN DRAIN STATUS OUTPUTS
s ON STATE OPEN LOAD DETECTION
s OFF STATE OPEN LOAD DETECTION
s SHORTED LOAD PROTECTION
s UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s PROTECTION AGAINST LOSS OF GROUND
s VERY LOW STAND-BY CURRENT
s REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VND810MSP is a monolithic device designed
in STMicroelectronics VIPower M0-3 Technology,
intended for driving any kind of load with one side
connected to ground.
Active VCC pin voltage clamp protects the device
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
BLOCK DIAGRAM
10
1
PowerSO-10™
ORDER CODES
PACKAGE
TUBE
T&R
PowerSO-10™ VND810MSP VND810MSP13TR
combined with thermal shutdown and automatic
restart protects the device against overload. The
current limitation threshold is aimed at detecting
the 21W/12V standard bulb as an overload fault.
The device detects open load condition both in on
and off state. Output shorted to VCC is detected in
the off state. Device automatically turns off in case
of ground pin disconnection.
Vcc
GND
INPUT1
STATUS1
INPUT2
STATUS2
Vcc
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
CLAMP 1
DRIVER 1
OVERTEMP. 1
LOGIC
CURRENT LIMITER 1
OPENLOAD ON 1
OPENLOAD OFF 1
OVERTEMP. 2
(**) See application schematic at page 8
July 2004
DRIVER 2
CLAMP 2
CURRENT LIMITER 2
OPENLOAD ON 2
OPENLOAD OFF 2
OUTPUT1
OUTPUT2
Rev. 1
1/19
1
1 page  
Switching time Waveforms
VOUTn
80%
dVOUT/dt(on)
VINn
td(on)
VND810MSP
90%
10%
td(off)
dVOUT/dt(off)
t
TRUTH TABLE
CONDITIONS
Normal Operation
Current Limitation
Overtemperature
Undervoltage
Overvoltage
Output Voltage > VOL
Output Current < IOL
INPUT
L
H
L
H
H
L
H
L
H
L
H
L
H
L
H
t
OUTPUT
L
H
L
X
X
L
L
L
L
L
L
H
H
L
H
STATUS
H
H
H
(Tj < TTSD) H
(Tj > TTSD) L
H
L
X
X
H
H
L
H
H
L
5/19
1
5 Page 
On State Resistance Vs Tcase
Ron (mOhm)
400
350
300 Iout=1A
Vcc=8V; 13V & 36V
250
200
150
100
50
0
-50 -25 0 25 50 75 100 125 150 175
Tc (ºC)
Openload On State Detection Threshold
Iol (mA)
60
55
50 Vcc=13V
Vin=5V
45
40
35
30
25
20
15
10
-50 -25 0 25
50 75 100 125 150 175
Tc (°C)
Input Low Level
Vil (V)
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
VND810MSP
On State Resistance Vs VCC
Ron (mOhm)
400
350
Iout=1A
300
250
Tc= 125ºC
200
Tc= 25ºC
150
100
Tc= - 40ºC
50
0
5 10 15 20 25 30 35
Vcc (V)
Input High Level
40
Vih (V)
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
2
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
Input Hysteresis Voltage
Vhyst (V)
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
-50 -25 0 25 50 75 100 125 150 175
Tc (°C)
11/19
1
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet VND810MSP13TR.PDF ] | |
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