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PDF X20C16PMB-45 Data sheet ( Hoja de datos )

Número de pieza X20C16PMB-45
Descripción High Speed AUTOSTORE NOVRAM
Fabricantes Xicor 
Logotipo Xicor Logotipo



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No Preview Available ! X20C16PMB-45 Hoja de datos, Descripción, Manual

APPLICATION NOTE
AVA I L A B L E
X20C16 AN56
16K X20C16
High Speed AUTOSTORE™ NOVRAM
2K x 8 Bit
FEATURES
Fast Access Time: 35ns, 45ns, 55ns
High Reliability
—Endurance: 1,000,000 Nonvolatile Store
Operations
—Retention: 100 Years Minimum
AUTOSTORE™ NOVRAM
—Automatically Stores RAM Data Into the
E2PROM Array When VCC Low Threshold is
Detected
—User Enabled Option
—Open Drain AUTOSTORE Status Output Pin
Power-on Recall
—E2PROM Data Automatically Recalled Into
RAM Upon Power-up
Software Data Protection
—Locks Out Inadvertent Store Operations
Low Power CMOS
—Standby: 250µA
Infinite E2PROM Array Recall, and RAM Read
and Write Cycles
PIN CONFIGURATION
PLASTIC
CERDIP
NE
NC
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 28 VCC
2 27 WE
3 26 AS
4 25 A8
5 24 A9
6 23 NC
7 22
8 X20C16 21
9 20
10 19
11 18
12 17
13 16
14 15
OE
A10
CE
NC
OE
I/O7
I/O6
A9
A8
AS
I/O5 WE
I/O4
I/O3
VCC
NE
3826 FHD F02
NC
3826 FHD F15.1
A7
A6
A5
A4
A3
SOIC
1 28
2 27
3 26
4 25
5 24
6 23
7 22
X20C16
8 21
9 20
10 19
11 18
12 17
13 16
14 15
AUTOSTORE™ NOVRAM is a trademark of Xicor, Inc.
©Xicor, Inc. 1991, 1995, 1996 Patents Pending
3826-2.9 7/31/97 T4/C0/D0 SH
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
DESCRIPTION
The Xicor X20C16 is a 2K x 8 NOVRAM featuring a high-
speed static RAM overlaid bit-for-bit with a nonvolatile
electrically erasable PROM (E2PROM) and the
AUTOSTORE feature which automatically saves the
RAM contents to E2PROM at power-down. The X20C16
is fabricated with advanced CMOS floating gate technol-
ogy to achieve high speed with low power and wide
power-supply margin. The X20C16 features a compat-
ible JEDEC approved pinout for byte-wide memories,
for industry standard RAMs, ROMs, EPROMs, and
E2PROMs.
The NOVRAM design allows data to be easily trans-
ferred from RAM to E2PROM (store) and E2PROM to
RAM (recall). The store operation is completed in 5ms or
less and the recall operation is completed in 10µs or
less. An automatic array recall operation reloads the
contents of the E2PROM into RAM upon power-up.
Xicor NOVRAMS are designed for unlimited write
operations to RAM, either from the host or recalls from
E2PROM, and a minimum 1,000,000 store operations to
the E2PROM. Data retention is specified to be greater
than 100 years.
TSOP
LCC
PLCC
X20C16
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 A9
A4 7
27 NC
A3 8
A2 9
A1 10
X20C16
(TOP VIEW)
26 NC
25 OE
24 A10
A0 11
23 CE
3826 ILL F17.2
NC
I/O0
12 22
13 21
14 15 16 17 18 19 20
I/O7
I/O6
3826 FHD F03
Characteristics subject to change without notice
1

1 page




X20C16PMB-45 pdf
X20C16
ENDURANCE AND DATA RETENTION
Parameter
Endurance
Store Cycles
Data Retention
Min.
100,000
1,000,000
100
MODE SELECTION
CE WE NE
HXX
L HH
L LH
L LH
L HL
L LL
L HH
L LL
L HL
OE
X
L
H
H
L
H
H
L
H
Mode
Not Selected
Read RAM
Write “1” RAM
Write “0” RAM
Array Recall
Software Command
Output Disabled
Not Allowed
No Operation
Units
Data Changes Per Bit
Store Cycles
Years
3826 PGM T07.1
I/O
Output High Z
Output Data
Input Data High
Input Data Low
Output High Z
Input Data
Output High Z
Output High Z
Output High Z
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
3826 PGM T09
EQUIVALENT A.C. LOAD CIRCUIT
5V
735
OUTPUT
A.C. CONDITIONS OF TEST
Input Pulse Levels
Input Rise and
Fall Times
Input and Output
Timing Levels
0V to 3V
5ns
1.5V
3826 PGM T08.1
318
30pF
3826 FHD F04
5

5 Page





X20C16PMB-45 arduino
X20C16
WE Controlled Software Command Sequence
ADDRESS
tWC
555
2AA
OE
CE
WE
NE
tSOE
DATA OUT
DATA IN
tAS
tNES
tSP tSPH
tAH
tNEH
tNHZ
tDS
AA
tDH
55
tSTO
555
tOEST
CMD
3826 FHD F09.2
11

11 Page







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