(PDF) ZDT717 Datasheet - DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

Número de pieza	ZDT717
Descripción	DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS
Fabricantes	Zetex Semiconductors
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No Preview Available ! SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT717 C1 C1 C2 C2 PARTMARKING DETAIL T717 B1 E1 B2 E2 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE -12 -12 -5 -10 -2.5 -55 to +150 UNIT V V V A A °C THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT Total Power Dissipation at Tamb = 25°C* Any single die on Both die on equally Ptot 2W 2.5 W Derate above 25°C* Any single die on Both die on equally 16 mW/ °C 20 mW/ °C Thermal Resistance - Junction to Ambient* Any single die on Both die on equally 62.5 °C/ W 50 °C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 348 1 page

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PDF ZDT717 Data sheet ( Hoja de datos )