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PDF XSD57120 Data sheet ( Hoja de datos )
| Número de pieza | XSD57120 | |
| Descripción | RF POWER TRANSISTORS The LdmoSTFAMILY | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de XSD57120 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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® SD57120
RF POWER TRANSISTORS
The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
ν EXCELLENT THERMAL STABILITY
ν COMMON SOURCE CONFIGURATION,
PUSH-PULL
ν POUT = 120 W with 13 dB gain @ 960 MHz
ν BeO FREE PACKAGE
ν INTERNAL INPUT MATCHING
DESCRIPTION
The SD57120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD57120 is designed for high gain
and broadband performance operating in
common source mode at 28V. Its internal
matching makes it ideal for base station
applications requiring high linearity.
M252
epoxy sealed
ORDER CODE
BRANDING
SD57120
XSD57120
PIN CONNECTION
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC)
S ym b o l
V(BR)DSS
VGS
ID
P DISS
Tj
TSTG
Parameter
Drain Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc= 70oC)
Max. O perating Junction Temperature
Storage Temperature
THERMAL DATA
Rth (j-c) Junct ion-Case Thermal Resistance
1. Drain
2. Drain
3. Source
4. Gate
5. Gate
Value
65
± 20
14
236
200
-65 to 150
Uni t
V
V
A
W
oC
oC
0.55
oC/ W
March 2000
1/7
1 page  
960 MHz Production Test Fixture
BALUN1
R6
C11
BF4
C10
TL1 BF1
C7
C5
L2
R1
C2 C3
C1
L1
R2
C4
C6
C8
BF2
C12
R5
C9
BF3
C14
C15
C13
R4
C20
C29 C31
BF6
C21
C27
C33
C35
C16 C18
C17
C34
L3
C23
L4
BALUN2
C25
C24
TL2
C19 C22
BF5 C26
R3
C28 C30
C32
SD57120
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet XSD57120.PDF ] | |
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