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PDF XP6534 Data sheet ( Hoja de datos )
| Número de pieza | XP6534 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XP6534
Silicon NPN epitaxial planer transistor
For high-frequency amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
2.1±0.1
0.425 1.25±0.1 0.425
16
25
34
Unit: mm
s Basic Part Number of Element
q 2SC2404 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Ratings
30
20
3
15
150
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
0.2±0.1
1 : Emitter (Tr1)
2 : Emitter (Tr2)
3 : Base (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Collector (Tr1)
EIAJ : SC–88
S–Mini Type Package (6–pin)
Marking Symbol: 7F
Internal Connection
Tr1
1
6
25
34
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Forward current transfer hFE ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Noise figure
Power gain
*1 Ratio between 2 elements
VCBO
VEBO
hFE
hFE (small/large)*1
VBE
Cre
fT
NF
PG
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA
VCB = 6V, IE = –1mA, f = 10.7MHz
VCB = 6V, IE = –1mA, f = 200MHz
VCB = 6V, IE = –1mA, f = 100MHz
VCB = 6V, IE = –1mA, f = 100MHz
min
30
3
40
0.5
450
typ max Unit
V
V
260
0.99
720 mV
0.8 1 pF
650 MHz
3.3 dB
24 dB
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XP6534.PDF ] | |
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