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PDF XP161A11A1PR Data sheet ( Hoja de datos )

Número de pieza XP161A11A1PR
Descripción Power MOS FET
Fabricantes Torex Semiconductor 
Logotipo Torex Semiconductor Logotipo



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No Preview Available ! XP161A11A1PR Hoja de datos, Descripción, Manual

x N-Channel Power MOS FET
x DMOS Structure
x Low On-State Resistance: 0.105MAX
x Gate Protect Diode Built-in
x Ultra High-Speed Switching
x SOT-89 Package
s Applications
q Notebook PCs
q Cellular and portable phones
q On-board power supplies
q Li-ion battery systems
s General Description
The XP161A11A1PR is a N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 package makes high density mounting possible.
s Features
Low on-state resistance: Rds(on)=0.065(Vgs=10V)
Rds(on)=0.105(Vgs=4.5V)
Ultra high-speed switching
Gate Protect Diode Built-in
Operational Voltage: 4.5V
High density mounting: SOT-89
u
s Pin Configuration
123
GDS
SOT-89
(TOP VIEW)
s Equivalent Circuit
123
N-Channel MOS FET
(1 device built-in)
s Pin Assignment
PIN
NUMBER
PIN
NAME
1G
2D
3S
FUNCTION
Gate
Drain
Source
s Absolute Maximum Ratings
Ta=25:
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
30 V
±20 V
4A
16 A
4A
Continuous Channel
Power Dissipation (note)
Pd
2W
Channel Temperature
Tch
Storage Temperature
Tstg
Note: When implemented on a ceramic PCB
150
-55~150
:
:

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