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PDF XN6A554 Data sheet ( Hoja de datos )
| Número de pieza | XN6A554 | |
| Descripción | Silicon NPN epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN6A554
Silicon NPN epitaxial planer transistor
For high speed switching
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
q Low VCE(sat).
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SC3757 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PT
Tj
Tstg
Ratings
40
40
5
100
300
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Collector (Tr2)
4 : Emitter (Tr2)
5 : Emitter (Tr1)
6 : Base (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: DT
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-off time
Turn-on time
Storage time
*1 Ratio between 2 elements
*2 Test Circuits
ICBO
IEBO
hFE
hFE (small/large)*1
VCE(sat)
VBE(sat)
fT
Cob
ton
toff
tstg
VCB = 40V, IE = 0
VEB = 4V, IC = 0
VCE = 1V, IC = 10mA
VCE = 1V, IC = 10mA
IC = 10mA, IB = 1mA
IC = 10mA, IB = 1mA
VCE = 10V, IE = –10mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
*2
min
60
0.5
typ max Unit
0.1 µA
0.1 µA
320
0.99
0.17 0.25
V
1.0 V
450 MHz
2 6 pF
17
17 ns
10
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN6A554.PDF ] | |
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