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PDF XN6435 Data sheet ( Hoja de datos )
| Número de pieza | XN6435 | |
| Descripción | Silicon PNP epitaxial planer transistor | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN6435
Silicon PNP epitaxial planer transistor
For high-frequency amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SA1022 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Ratings
–30
–20
–5
–30
300
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 7W
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
*1 Ratio between 2 elements
ICBO
ICEO
IEBO
hFE
hFE (small/large)*1
VCE(sat)
VBE
fT
NF
Zrb
Cre
VCB = –10V, IE = 0
VCE = –20V, IB = 0
VEB = –5V, IC = 0
VCE = –10V, IC = –1mA
VCE = –10V, IC = –1mA
IC = –10mA, IB = –1mA
VCE = –10V, IC = –1mA
VCB = –10V, IE = 1mA, f = 200MHz
VCB = –10V, IE = 1mA, f = 5MHz
VCB = –10V, IE = 1mA, f = 2MHz
VCB = –10V, IE = 1mA, f = 10.7MHz
min
50
0.5
150
typ
0.99
– 0.1
– 0.7
2.8
22
1.2
max
–0.1
–100
–10
220
Unit
µA
µA
µA
V
V
MHz
dB
Ω
pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN6435.PDF ] | |
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