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PDF XN1D873 Data sheet ( Hoja de datos )
| Número de pieza | XN1D873 | |
| Descripción | Silicon N-channel junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Composite Transistors
XN1D873
Silicon N-channel junction FET
For analog switching
s Features
q Two elements incorporated into one package.
(Drain-coupled FETs)
q Reduction of the mounting area and assembly cost by one half.
q Low-frequency and low-noise J-FET.
0.65±0.15
5
4
3
2.8
+0.2
-0.3
1.5
+0.25
-0.05
Unit: mm
0.65±0.15
1
2
s Basic Part Number of Element
q 2SK1103 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Rating Gate to drain voltage
of Drain current
element
Gate current
Total power dissipation
Overall Channel temperature
Storage temperature
VGDS
ID
IG
PT
Tch
Tstg
–50
30
10
300
150
–55 to +150
Unit
V
mA
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Gate (Tr1)
2 : Gate (Tr2)
3 : Source (Tr2)
4 : Drain
5 : Source (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: OC
Internal Connection
FET 1
5
1
4
32
FET 2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Drain current
Drain current
Gate cutoff current
Gate to source cutoff voltage
Mutual conductance
VGDS
IDSS
IGSS
VGSC
gm
Drain ON resistance
Common source short-circuit input capacitance
Common source reverse transfer capacitance
Common source short-circuit output capacitance
RDS(on)
Ciss
Crss
Coss
IG = –10µA, VDS = 0
VDS = 10V, VGS = 0
VGS = –30V, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 1mA, f = 1kHz
VDS = 10mV, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, f = 1MHz
min typ max Unit
–50 V
0.2 6.0 mA
–10 nA
–1.5 –3.5
V
1.8 2.5
mS
300 Ω
7 pF
1.5 pF
1.5 pF
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet XN1D873.PDF ] | |
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