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PDF XN04111 Data sheet ( Hoja de datos )

Número de pieza XN04111
Descripción Silicon PNP Epitaxial Transistor
Fabricantes Panasonic Semiconductor 
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No Preview Available ! XN04111 Hoja de datos, Descripción, Manual

Composite Transistors
XN04111 (XN4111)
Silicon PNP epitaxial planar type
For switching/digital circuits
Features
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Basic Part Number
UNR2111 (UN2111) × 2
2.90+–00..0250
1.9±0.1
(0.95) (0.95)
456
32
0.30+–00..0150
0.50+–00..0150
10˚
1
Unit: mm
0.16+–00..0160
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
300
150
55 to +150
Unit
V
V
mA
mW
°C
°C
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
Marking Symbol: 9U
Internal Connection
45
6
Tr2
Tr1
Electrical Characteristics Ta = 25°C ± 3°C
321
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
0.5 mA
Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
35
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
0.25 V
Output voltage high-level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
Output voltage low-level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 k
0.2 V
Input resistance
R1
30% 10 +30% k
Resistance ratio
R1 / R2
0.8 1.0 1.2
Transition frequency
fT VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
Note) The part number in the parenthesis shows conventional part number.
SJJ00044BED
1

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