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PDF IRFIZ48V Data sheet ( Hoja de datos )
| Número de pieza | IRFIZ48V | |
| Descripción | Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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l Advanced Process Technology
l Ultra Low On-Resistance
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
Fullpak is mounted to a heatsink using a single clip or by a
single screw fixing.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
www.irf.com
PD-94072
IRFIZ48V
HEXFET® Power MOSFET
D
VDSS = 60V
RDS(on) = 12mΩ
ID = 39A
S
TO-220 FULLPAK
Max.
39
27
290
43
0.29
± 20
72
15
5.3
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
3.5
65
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
02/12/01
1 page  
40
30
20
10
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRFIZ48V
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V+- DD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFIZ48V.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFIZ48 | Power MOSFET(Vdss=60V/ Rds(on)=0.018ohm/ Id=37A) | International Rectifier |
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| IRFIZ48 | Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A) | International Rectifier |
| IRFIZ48G | Power MOSFET(Vdss=60V/ Rds(on)=0.018ohm/ Id=37A) | International Rectifier |
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