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PDF IRFI9634G Data sheet ( Hoja de datos )
| Número de pieza | IRFI9634G | |
| Descripción | Power MOSFET(Vdss=-250V/ Rds(on)=1.0ohm/ Id=-4.1A) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PRELIMINARY
l Advanced Process Technology
l Dynamic dv/dt Rating
l 150°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Third Generation HEXFETs from International Rectifier
provide the designer with the best combination of fast
switching, ruggedized device design, low on-resistance
and cost-effectiveness.Third Generation HEXFETs from
International Rectifier provide the designer with the
best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
G
PD - 9.1488
IRFI9634G
HEXFET® Power MOSFET
D VDSS = -250V
RDS(on) = 1.0Ω
ID = -4.1A
S
TO-220 FULLPAK
Max.
-4.1
-2.6
-16
35
0.28
± 20
520
-4.1
3.5
-5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
3.6
65
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
8/8/96
1 page  
IRFI9634G
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , C ase Tem perature (°C )
A
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
VDS
VGS
RG
RD
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VGS
10%
td(on) tr
td(off) tf
90%
VDS
Fig 10b. Switching Time Waveforms
D = 0.50
1
0.20
0.10
0 .0 5
0.1 0.02
0 .01
0.01
0.00001
S IN G LE P U L S E
(THERMAL RESPONSE)
0.0001
PD M
t1
t2
Notes:
1. D uty factor D = t1 / t 2
2. P ea k TJ = P D M x Z thJ C + T C
0.001
0.01
0.1
1
t1 , Re ctangular Pulse D uratio n (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFI9634G.PDF ] | |
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