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PDF IRFF9230 Data sheet ( Hoja de datos )
| Número de pieza | IRFF9230 | |
| Descripción | -4.0A/ -200V/ 0.800 Ohm/ P-Channel Power MOSFET | |
| Fabricantes | Intersil Corporation | |
| Logotipo |  |
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Data Sheet
IRFF9230
February 1999 File Number 2225.2
-4.0A, -200V, 0.800 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17512.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9230
TO-205AF
IRFF9230
NOTE: When ordering, use the entire part number.
Features
• -4.0A, -200V
• rDS(ON) = 0.800Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
4-114
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFF9230
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = -250µA
1.15
1.05
2000
1600
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1200
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
800 CISS
400
COSS
CRSS
0 0 -10 -20 -30 -40 -50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
7.0
PULSE DURATION = 80µs
5.6
TJ = -55oC
4.2 TJ = 25oC
TJ = 125oC
2.8
1.4
0
0 -3 -6 -9 -12 -15
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
-10 TJ = 150oC
-1.0 TJ = 25oC
-0.1
-0.4
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -4A
-5
-10
VDS = -160V
VDS = -100V
VDS = -40V
-15
0 8 16 24 32 40
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-118
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFF9230.PDF ] | |
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