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PDF IRFF9220 Data sheet ( Hoja de datos )

Número de pieza IRFF9220
Descripción -2.5A/ -200V/ 1.5 Ohm/ P-Channel Power MOSFETs
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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Data Sheet
IRFF9220
July 1998 File Number 2288.2
-2.5A, -200V, 1.5 Ohm, P-Channel Power
MOSFETs
These are advanced power MOSFETs designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are P-Channel
enhancement mode silicon gate power field effect transistors
designed for applications such as switching regulators,
switching converters, motor drivers, relay drivers and drivers for
high power bipolar switching transistors requiring high speed
and low gate drive power. These types can be operated directly
from integrated circuits.
Formerly develpomental type TA17502.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9220
TO-205AF
IRFF9220
NOTE: When ordering, use the entire part number.
Features
• -2.5A, -200V
• rDS(ON) = 1.5
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
4-107
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

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IRFF9220 pdf
IRFF9220
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
500
VGS = 0V, f = 1MHz
CISS = CGS + CGD
400
CRSS = CGD
COSS CDS + CGD
300 CISS
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
200
100
0
0
COSS
CRSS
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
4.0
PULSE DURATION = 80µs
3.2
TJ = -55oC
2.4 TJ = 25oC
1.6 TJ = 125oC
0.8
0
0 -1 -2 -3 -4 -5
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
-10
TJ = 150oC
-1.0 TJ = 25oC
-0.1
-0.4
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -2.5A
-5
-10
VDS = -100V
-15 VDS = -60V
VDS = -40V
-20
0
4 8 12 16
Qg(TOT), TOTAL GATE CHARGE (nC)
20
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-111

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