|
|
Número de pieza | IRFF9130 | |
Descripción | -6.5A/ -100V/ 0.300 Ohm/ P-Channel Power MOSFET | |
Fabricantes | Intersil Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRFF9130 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Data Sheet
IRFF9130
February 1999 File Number 2216.3
-6.5A, -100V, 0.300 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFF9130
TO-205AF
IRFF9130
NOTE: When ordering, include the entire part number.
Features
• -6.5A, -100V
• rDS(ON) = 0.300Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC TO-205AF
DRAIN
(CASE)
GATE
SOURCE
4-101
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page IRFF9130
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
600
400
CISS
COSS
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
200 CRSS
0
0 -10 -20 -30 -40 -50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
TJ = -55oC
TJ = 25oC
4
TJ = 125oC
3
2
1
PULSE DURATION = 80µs
0
0 -4 -8 -12 -16 -20
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
-10
TJ = 150oC
-1
TJ = 25oC
-0.1
-0.4
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
ID = -6.5A
-5
-10
VDS = -80V
VDS = -50V
-15 VDS = -20V
-20
-25
0
8
16 24
32
Qg(TOT), TOTAL GATE CHARGE (nC)
40
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-105
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRFF9130.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFF9130 | -6.5A/ -100V/ 0.300 Ohm/ P-Channel Power MOSFET | Intersil Corporation |
IRFF9130 | Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 | New Jersey Semiconductor |
IRFF9131 | Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 | New Jersey Semiconductor |
IRFF9132 | Trans MOSFET P-CH 100V 6.5A 3-Pin TO-39 | New Jersey Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |